IS43TR16640B-107MBLI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3
Memory Size:	1Gb (64M x 16)
Clock Frequency:	933MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.425 V ~ 1.575 V
Operating Temperature:	-40°C ~ 95°C (TC)
Mounting Type:	Surface Mount
Package / Case:	96-TFBGA
Supplier Device Package:	96-TWBGA (9x13)

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<p>The IS43TR16640B-107MBLI is a type of memory structure specifically designed for a wide range of applications. It is widely used in many different products, from automotive and medical to industrial and consumer electronics. This memory structure is also widely used for storing application, programming and communication or data and instruction codes.</p><p>The IS43TR16640B-107MBLI is made up of Dynamic Random Access Memory (DRAM) technology and offers a combination of high performance and low power consumption, which makes it an ideal choice for numerous applications. It is available in two different sizes, a 4GB and an 8GB version. The memory chips use a Double Data Rate (DDR) where two independent data packets can be transferred simultaneously.</p><p>This memory structure provides both read and write operations with equal amounts of data and instructions. The on-chip pre-fetch buffer helps to store the instructions before they are accessed, making the memory access faster. This memory is also designed to operate at up to 1.5V and can effectively reduce power consumption. In addition, it also supports error-free error correction and supports 16-bit and 10-bit encoding for data and instruction codes.</p><p>The IS43TR1 6640B-107MBLI has several features that make it suitable for many different applications. It has the ability to transfer data and instructions at high speeds and its power efficiency make it a perfect choice for mobile and embedded systems. It also supports error correction and can effectively reduce risk of errors in data storage and transfer.</p><p>In terms of its working principle, IS43TR16640B-107MBLI draws power from devices such as a battery, AC adapter, or any other external power source. It will then dynamically adjust its power consumption while maintaining the data and instruction throughput. To read and write data, the memory structure uses two separate channels, one for data and one for instruction, which helps to maximize performance.</p><p>The memory structure’s high speed and low power consumption make it suitable for a wide variety of applications, ranging from automotive and medical to industrial, consumer electronics and more. It is available in two different sizes, a 4GB and an 8GB version, and supports 16-bit and 10-bit encoding for data and instruction codes. With its easy to use and configure features, the IS43TR16640B-107MBLI is a great choice for any type of application.</p>

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