Allicdata Part #: | IS65C1024AL-45QLA3-ND |
Manufacturer Part#: |
IS65C1024AL-45QLA3 |
Price: | $ 2.83 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 1M PARALLEL 32SOP |
More Detail: | SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral... |
DataSheet: | IS65C1024AL-45QLA3 Datasheet/PDF |
Quantity: | 1000 |
252 +: | $ 2.56992 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-SOIC (0.445", 11.30mm Width) |
Supplier Device Package: | 32-SOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an important factor in computing technology, and IS65C1024AL-45QLA3 memory is one of the most popular memories in the global market. It is designed to provide users with reliable and high-performance memory for a wide range of applications. In this article, we will discuss the application field and working principle of IS65C1024AL-45QLA3 memory.
Application Field
IS65C1024AL-45QLA3 memory is ideal for use in a wide range of applications, including consumer electronics, automotive, industrial, and medical. Its design has enabled it to be used in portable consumer electronics applications, such as digital cameras, digital music players, and portable gaming systems. In addition, the memory is also suitable for use in automotive applications, including embedded systems and vehicle networking. Industrial applications benefit from its high-performance memory, while medical applications benefit from its reliability and stability.
Working Principle
The working principle of IS65C1024AL-45QLA3 memory is based on the dynamic random access memory (DRAM) architecture. This type of architecture is composed of multiple transistors and capacitors, which are arranged in a regular fashion. The capacitors are used to store electrical charge, while the transistors are used to control the flow of the electrical charge. The DRAM architecture allows the memory to access data in a manner that is much faster than other types of memory.
The DRAM architecture is based on a concept called “cell settling”. In cell settling, each transistor is assigned a specific cell that is associated with a single bit of memory. By writing different voltage levels to the specified cells, a specific pattern of bits can be stored. The cell settling ensures that the contents of the memory remain stable, regardless of the amount of time that passes without access to the memory.
IS65C1024AL-45QLA3 memory is also equipped with error-correction code (ECC) functionality. This functionality allows the memory to detect and correct any errors that occur during electrical signals. In addition, the ECC also reduces the number of read/write cycles needed to access data, thus increasing the memory’s efficiency.
Conclusion
IS65C1024AL-45QLA3 memory is a reliable and high-performance memory that is suitable for use in a wide range of applications. Its DRAM architecture and ECC functionality enable it to access data quickly and accurately, and its cell settling ensures that the contents of the memory remain stable. These features make it an ideal choice for consumer electronics, automotive, industrial, and medical applications.
The specific data is subject to PDF, and the above content is for reference
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