IS65WV12816BLL-55TLA3-TR

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Memory is an essential factor of a computer system, and IS65WV12816BLL-55TLA3-TR is a type of memory chip of which the application and working principle belongs to the category of memory.

IS65WV12816BLL-55TLA3-TR is a type of SRAM chip, with a capacity of 8M bits and an operating voltage of 3.3V, capable of performing random read and write operations. As such, it is an ideal choice for wearable device, while its small size is especially attractive to client and embedded market.

This chip also supports asynchronous operation, meaning that the operations can be executed without the need of external clock. This allows it to be compatible with a wide range of devices. Additionally, due to a onboard asynchronous command decoder, it is capable of supporting both page read and page write operations, which would otherwise require considerably more pins when executed through external logic.

IS65WV12816BLL-55TLA3-TR uses a 1-transistor SRAM cell design, offering a self-contained dynamical operation. Each cell consists of a core and a single transistor, consisting of a pull-up transistor coupled to the gate of a pull-down transistor, facing down; this transistor allows the cell to store 1 bit of data. When charged with a positive voltage, the transistors are turned on, and when the gate is reversely charged with a negative voltage, the transistors pull down the bit line and hence store a bit of logic 0.

In order for the cell to store a logic 1, the same transistors are infused with a repulsive electric field in order to push the bit away, allowing the cell to store a bit of logic 1. To explain in more technical terms, during the write operation, the voltage on the word line activates both transistors and the bit line is pulled up to a 1V threshold. Then, by putting a negative charge on the word line, the cell pulls the bit line low to store logic 1.

To read a bit of data, the voltage on the word line is driven high, and the sense amplifiers read the current flowing between the bit line and bit line bar. If the transistors in the selected cell are turned off, the current flow will be high indicating a logic 0; on the other hand, the low current flow indicates a logic 1. in a nutshell, the SRAM cell is used to store 1 bit of data and the read/write operation is done through the sense amplifiers.

In conclusion, IS65WV12816BLL-55TLA3-TR is an 8M-bit SRAM chip with an operating voltage of 3.3V and a small size, making an ideal choice for many applications especially wearable devices. Its operation is based on the 1-transistor SRAM cell design, allowing it to perform random read and write operations and page read/write operations with a single memory chip.

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