IS65C256AL-25TLA3

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The IS65C256AL-25TLA3 is a static random access memory (SRAM) device manufactured by Integrated Silicon Solution Inc. (ISSI). It is a 256 Kbit CMOS Low-Voltage Static RAM with an array of 32Kx8 memory bits, which are organized as 4096 words of 8 bits each. The device is designed for use in automotive, industrial and other SRAM applications where access times of 25ns and lower power consumption is desired.

The IS65C256AL-25TLA3 has an operating voltage range of 1.7V to 3.6V, with a maximum operating temperature of +85°C. It has a single supply write enable signal, with an asynchronous write enable input and an asynchronous chip enable input. The device features a standby current of less than 1µA. It is also offered in lead-free, TLA3 package with a top solder ball count of 24.

The IS65C256AL-25TLA3 is designed to provide low-voltage, fast static random access memory (SRAM) for automotive, industrial and other SRAM applications. The device has low power consumption, high speed, and a high reliability of up to one million write/read cycles. It is an ideal choice for applications that require fast data access and low power consumption, such as embedded control systems, digital signal processing systems and serial port buffer storage.

The IS65C256AL-25TLA3 features a static CMOS design structure, which is capable of halting the flow of current through the device during data retention. This allows the device to consume power only when data is being written or read. The static memory distribution array is structured in a 32Kx8 configuration, which offers the user a choice of densely populated memory designs. Furthermore, the device supports a single supply write enable signal and operates on either a positive or negative voltage.

The working principle of the IS65C256AL-25TLA3 is based on the principles of static random access memory (SRAM). This type of memory is static, meaning that the cells can store data without requiring external charge to hold the stored information. SRAM also has the benefit of being able to run at higher speeds than other common types of memory, such as dynamic RAM and flash RAM. The IS65C256AL-25TLA3 features dedicated logic circuits which allow the device to switch quickly between write and read cycles, providing the user with fast access times of 25ns and fast cycle times.

The IS65C256AL-25TLA3 is a versatile and powerful SRAM device which is ideally suited for automotive, industrial and other demanding SRAM applications. The device offers low power consumption, high speed and high reliability. The static CMOS design and single supply write enable signal make the IS65C256AL-25TLA3 an ideal choice for applications where fast data access times and low power consumption are desired.

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