IS65WV12816BLL-55TLA3

The IS65WV12816BLL-55TLA3 is a high-performance static random access memory (SRAM) made by Integrated Silicon Solution Inc. (ISSI). It provides a low-power, cost-effective, high-density memory solution for embedded systems. SRAM is a type of non-volatile random access memory that is used to store programs and data in digital electronic systems namely computers. It is typically used in devices like solar cells where data must be retained when power is not present. The IS65WV12816BLL-55TLA3 is designed to provide single-cycle access at speeds up to 55MHz, while consuming very low active power. The device consists of 16K words by 8 bits of static RAM.

Application field of IS65WV12816BLL-55TLA3

The IS65WV12816BLL-55TLA3 memory module is suitable for a wide range of applications in embedded systems, including:

• Industrial and Automation Control
• Networking and Telecommunications
• Data Storage Systems
• Computer System Peripherals
• Complex Programmable Logic Devices (CPLDs)
• Automotive Applications
• Medical Devices and Wearable Electronics
• Robotic Systems

The IS65WV12816BLL-55TLA3 memory module is designed to provide enhanced performance in these applications while consuming very low active power. The device supports byte-wide and page write operations, and features a fast cycle time of 55MHz.

Working principle of IS65WV12816BLL-55TLA3

The IS65WV12816BLL-55TLA3 memory module uses static random access memory (SRAM) technology. SRAM is a type of non-volatile random access memory that is used to store programs and data in digital electronic systems. Unlike dynamic RAM (DRAM) which uses capacitors to store data, SRAM uses bistable latches. This type of memory is faster and more reliable than DRAM because it does not need to be periodically refreshed. The IS65WV12816BLL-55TLA3 uses two banks of SRAM cells, each containing 16K words by 8 bits.

The memory module operates on 3.3V and 1.8V supplies, allowing the user to select between 1.8V and 3.3V interface options. The module supports byte-wide and page write operations and features a fast cycle time of 55MHz. The device also supports conventional asynchronous READ and WRITE operations. The device also has active power of just 30 mW in 3.3V mode and just 23 mW in 1.8V mode, making it ideal for low power applications.

The IS65WV12816BLL-55TLA3 memory module is designed to provide an efficient and cost-effective solution for the many embedded memory applications found in the industrial, automotive, medical and consumer electronics markets. With its low power consumption and high-speed access time of 55MHz, the IS65WV12816BLL-55TLA3 provides an ideal solution for embedded designs.