IS65WV25616DBLL-45CTLA1-TR

The IS65WV25616DBLL-45CTLA1-TR is an integrated memory circuit in a single package. It is part of a larger family of integrated memories known as DRAMs, or Dynamic Random Access Memories. This type of integrated circuit provides a higher density of storage capacity than other types of memory and can be used for a wide range of applications.

The IS65WV25616DBLL-45CTLA1-TR is a 4M x 4 bits CMOS DRAM. It has a 5V voltage supply and a clock frequency of up to 200MHz. The device is organized as 262,144 words of 4 bits each and has an asynchronous timing system for burst access of up to 16 words. The device also includes an on-chip DLL for clock adjustment and clock synchronization.

The IS65WV25616DBLL-45CTLA1-TR has several applications in the fields of robotics and automation, digital signal processing, embedded systems, wearable electronics, and multimedia. In robotics and automation, this memory can be used to store instructions given to robotic devices that are used in automated systems. It can also be used to store digital signals for digital signal processing applications, such as audio and video compression, image processing, and system control. In embedded systems, this memory can be used for storing software applications and program instructions. In wearable electronics and multimedia applications, this memory is used to store videos, music, and images that are used in these applications.

The IS65WV25616DBLL-45CTLA1-TR also has a number of features that make it well suited for these applications. It has an 80nS access time and a 512K page burst mode, which allows the device to retrieve data quickly. It also has an integrated on-chip ECC (Error Correcting Code) which allows the device to detect and correct memory errors. This makes the device more reliable and increases its performance. In addition, the device has an on-chip DLL which allows for clock synchronization and adjustment.

The working principle of the IS65WV25616DBLL-45CTLA1-TR is simple. It is a type of integrated memory circuit that is based on DRAM technology. DRAM stands for Dynamic Random Access Memory, which is a type of memory that stores data in a two-dimensional matrix. The data is stored in small capacitors located on an integrated circuit substrate. When the integrated circuit is supplied with a voltage, an electric current will flow through the capacitors, which will store the data. When a read or write operation is required, the current will be reversed and the requested data will be retrieved or written to the memory.

The IS65WV25616DBLL-45CTLA1-TR is a highly advanced integrated memory circuit that is used in a variety of applications. It is capable of servicing multiple users simultaneously, and has features that make it well suited for robotics and automation, digital signal processing, embedded systems, wearable electronics, and multimedia applications.