IS65WV25616DBLL-55CTLA3 Allicdata Electronics
Allicdata Part #:

IS65WV25616DBLL-55CTLA3-ND

Manufacturer Part#:

IS65WV25616DBLL-55CTLA3

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS65WV25616DBLL-55CTLA3 datasheetIS65WV25616DBLL-55CTLA3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS65WV25616DBLL-55CTLA3 is a high-performance memory component. It is based on the SPACE platform, a leading-edge semiconductor memory device developed by ISSI (Integrated Silicon Solution, Inc). This component has many applications within the industrial, automotive, and consumer electronic sectors. But what makes it unique is its excellent working principle and ability to be used in a wide range of fields.

IS65WV25616DBLL-55CTLA3 is a static random-access memory (SRAM) device. It is composed of 256K words with 16 bits per word, organized in 4096 rows and 16 columns. The device has a low-power sleep mode and a self-refresh mode (SRM) for improved energy conservation during periods of inactivity. The component also features an advanced interface and is optimized for fast access times and low power consumption, making it an ideal choice for high-speed and low-power applications.

The component also features an advanced write-protect feature that prevents accidental or unwanted writing to the memory. This helps protect against any data corruption that could occur if writing was allowed on the device. The device also features parity-error checking & correction (ECC), which further enhances data integrity within the SRAM. The ECC feature also helps minimize the chances of data loss, helping assure reliable operation within mission-critical applications.

The component has an extensive operating temperature range, from -55 to +125 degrees Celsius, which makes it suitable for a wide range of environments. This feature also ensures reliable operation in harsh settings, such as automotive applications that require extremely robust components.

Due to its extremely low active-current and power-down leakage current, IS65WV25616DBLL-55CTLA3 is an ideal choice for battery-powered applications. The device’s low active-current ensures that it does not drain the battery quickly, making it a great choice for portable applications. The device also has a wide-voltage range, allowing it to operate reliably in environments with different power requirements.

The component supports single-cycle EDAC operations, making it easy to detect and correct any errors that might occur. The device is also designed with an on-chip test logic that allows for simple product testing without an external test controller.

IS65WV25616DBLL-55CTLA3 is an ideal choice for use across a broad range of applications. With its advanced features and reliable performance, it is an ideal choice for mission-critical applications. Furthermore, its low active-current and power-down leakage current make it well-suited for battery-powered applications, ensuring that it does not drain the battery quickly. With its wide-voltage range and extensive operating temperature range, the component is suitable for use in a wide variety of environments.

The specific data is subject to PDF, and the above content is for reference

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