IS65WV25616DBLL-55CTLA3-TR Allicdata Electronics
Allicdata Part #:

IS65WV25616DBLL-55CTLA3-TR-ND

Manufacturer Part#:

IS65WV25616DBLL-55CTLA3-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS65WV25616DBLL-55CTLA3-TR datasheetIS65WV25616DBLL-55CTLA3-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS65WV25616DBLL-55CTLA3-TR is an ultra-high speed, low power 256Kx16 TSOP56 FRAM device powered by RAMTRON. It is the newest in the family of Ferroelectric Random Access Memory (FRAM) memories that brings together the benefits of nonvolatile technologies with the speed of volatile memories. This device achieves both high performance and low power consumption, while also providing a ‘zero latency’ architecture that maximizes read and write speeds.

Memory Applications of IS65WV25616DBLL-55CTLA3-TR

The IS65WV25616DBLL-55CTLA3-TR provides the user with a wide range of memory applications, including but not limited to:

  • Industrial instrumentation and automotive systems
  • Portable medical instruments
  • Consumer electronics
  • Security systems
  • RFID & Barcodes
  • Wireless & Networks

The IS65WV25616DBLL-55CTLA3-TR is the ideal solution for applications that need the reliability and cost-effectiveness of a high-performance, low-power memory system. Its high-speed operation and low power consumption make it suitable for portable and automation applications.

Working Principle of IS65WV25616DBLL-55CTLA3-TR

The IS65WV25616DBLL-55CTLA3-TR is a non-volatile memory with a unique ‘zero latency’ architecture that enables very fast read and write speeds. It utilizes Ferroelectric Random Access Memory (FRAM) technology which allows for non-volatile data storage. This type of memory offers the same read and write speeds as volatile memory, but with no loss of data.

The device\'s architecture consists of a 16bit data bus and its two address pins can be used to select up to a total of 256K 16 bit words (2Fh x 16 = 3FFFh words). Both the address and data bus are double-buffered to allow for fast read and write operations. It also supports burst read operations, allowing for quick transfer of large blocks of data. With a data access time as low as 55ns, the IS65WV25616DBLL-55CTLA3-TR is the fastest of its kind.

The device\'s low power consumption is achieved through a power saving feature that reduces the current consumption to 6uA when the device is not in use. This makes it ideal for use in applications where low power is a priority. The device is also capable of operating in temperature ranges from -40° C to +85° C.

Conclusion

In conclusion, the IS65WV25616DBLL-55CTLA3-TR is a high-performance, low-power memory device designed for a wide range of applications. From consumer electronics to RFID & barcodes to wireless & network systems, this device provides a reliable and cost-effective solution that is capable of operating in temperatures ranging from -40° C to +85° C. Its ‘zero latency’ architecture, burst read capability and 16 bit data bus enable very fast read and write operations, making it ideal for applications where data storage speed is a priority.

The specific data is subject to PDF, and the above content is for reference

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