ISL6594BCRZ-T

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The ISL6594BCRZ-T is a gate driver device from the PMIC (power management integrated circuit) division of Intersil. The device is a monolithic, 3-phase, dynamic-body-diode gate driver that provides 2A of peak source and sink current over a wide range of voltages to drive MOSFETs and IGBTs in various switching applications. It is available in a 16-pin MLPQ package. ISL6594BCRZ-T has been designed for low-power applications including dc-dc converters, automotive power management, and motor control.

The ISL6594BCRZ-T gate driver is composed of two isolated DMOS MOSFETs per channel. The off-channel high-side gate driver consists of two NMOS MOSFETs connected as an inverter with VDD2 (3.3V or 5V) as the gate driver supply. The low-side gate driver consists of two PMOS MOSFETs connected in series and driven by the off-channel high-side gate driver. Each high-side gate driver is capable of providing 2A of peak source current to charge the external gatecap, while the low-side gate driver is capable of providing 2A of peak sink current to discharge the external gatecap.

The device also features independent enables for each channel, adjustable dead times for each channel, and a slew rate control for the high-side and low-side drivers, which provide flexibility and improved system performance. The device also features an over-temperature protection, under-voltage shutdown protection, and an over-voltage protection for the low-side drivers, which ensure safe operation.

ISL6594BCRZ-T\'s main application field is in fast switching and low power applications, such as automotive power management, BLDCM motor control, brushless 3-phase DC-DC converters, robotics, LED lighting, and automotive LED lighting center. It also finds use in power supply applications such as on-board power supplies and relay drivers.

The device works by providing regulated VDD1 (1.2V to 3.3V) and VDD2 (3.3V or 5V), depending on the application, as the gate driver supply. The ISL6594BCRZ-T is designed to provide a low RDS(on) at the drain and a high dV/dt at the gate. The low-side drivers offer an adjustable slew rate from 0.3V/us to 5V/us, which allows for a smooth gate switching transition and enhances EMI (electromagnetic interference) and ESD (electrostatic discharge) performance. The off-channel high-side gate driver can be enabled or disabled using the Enable control pin. The device also features adjustable dead times for each channel, to prevent current recirculation in the MOSFETs.

ISL6594BCRZ-T is designed to be very efficient in terms of power consumption. It has a low quiescent current of 5μA and a low operating voltage of 1.2V, which reduces the system\'s overall power consumption. The device also features an over-temperature protection, under-voltage shutdown protection, and an over-voltage protection for the low-side drivers, which ensure safe operation.

In conclusion, the ISL6594BCRZ-T is a versatile gate driver device from the PMIC division of Intersil. It is widely used in various switching applications and offers high peak source and sink currents, adjustable dead times, low power consumption and over-temperature protection. This device is ideal for automotive power management, brushless 3-phase DC-DC converters, LED lighting, and various other low power applications.

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