ISL6605CB-T

ISL6605CB-T is an integrated gate control and protection product for high-side power MOSFETs and IGBTs in high power applications such as motor drives, Relay Drivers, Dc-Dc stages, and UPS systems. This device combines the robustness and safety of high-side components with the low cost of low-side devices. It features a variety of protections, high frequency operation, and integrated RDS(ON) sensing.

Application Field

The ISL6605CB-T is designed to drive high power MOSFETs and IGBTs in a wide variety of motor drive and other power conversion applications. It provides a robust, efficient and cost effective solution to drive high current MOSFETs and IGBTs from medium to high power supplies. This device has a wide operating range from -55V to +55V, making it suitable for a wide range of power applications.

The main application areas for the ISL6605CB-T include motors, DC-DC converters, SMPS, EV/HEV power conversion and LED lighting. The device is also used in uninterruptible power supply (UPS) and DC/DC conversion. This part is also applicable for automobile, solar cell, and industrial applications.

Working Principle

The operating principle behind the ISL6605CB-T is fairly straightforward. The device features four internal gate drivers that provide instantaneous current driving capability up to 4A peak. This energy is used to turn the external Power MOSFET or IGBT switch on or off. An integrated voltage-regulation circuit and an RDS(ON) sensing circuit are provided to ensure optimal performance and protection from overcurrent and over temperature events.

The integrated protection circuits protect the outputs from overcurrent and thermal overload. The main advantage of this device is its low supply voltage operation, which makes it suited for low power applications. The device also features a high slew rate and a high frequency gate drive capability, enabling it to be used in high-speed switching applications.

The ISL6605CB-T has a built-in active turn-off circuit. This circuit ensures that the power MOSFET or IGBT switch is quickly turned off and the source current is safely routed back through the internal protected circuit. The device also features an overvoltage protection circuit that ensures the external power MOSFET switch will not be damaged during a power surge.