ISL6612BIRZ-T

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The ISL6612BIRZ-T is a single-channel, high-side or low-side MOSFET/IGBT Gate Driver IC designed for power management applications such as power factor correction, battery charging, step-down, and automotive DC-DC converter applications. It combines a low 3-2.7V operating voltage range and a low quiescent current of 2.5mA along with a wide temperature range from -55°C to 125°C, making it well-suited for a variety of applications including on-board automotive and telecoms.

The ISL6612BIRZ-T features an integrated driver with a level shifting architecture, providing enhanced robustness and performance. The device is capable of driving a single MOSFET/IGBT up to 15A peak at a 5ns rise/fall time and 70mV drain-to-source voltage (VD < 0.5V). The device includes overvoltage protection, a fast turn-on time of 100ns, and a soft turn-on feature that enables smooth MCU-style start-up.

In terms of its working principle, the ISL6612BIRZ-T combines a low capacitance protection network and an integrated power MOSFET/IGBT driver. The protection network prevents the voltage across the gate/drain from exceeding the maximum VGTD limit, helping to protect the MOSFET/IGBT from overvoltage damage. The integrated power MOSFET/IGBT driver provides sufficient boost voltage to ensure a fast turn-on and turn-off time of the MOSFET/IGBT.

The ISL6612BIRZ-T is designed for use in a wide range of power management applications such as power factor correction (PFC), battery charging, and DC-DC conversion in automotive, communication, and computer systems. It can be used as a low-side/high-side driver IC in power conversion systems, such as in DC-DC converters, motor controllers, and LED dimming systems. In addition, it can also be used in a variety of other applications, such as TV audio amplifiers, DC-DC boost converters, UPS systems, active inductors, and class-D audio amplifiers.

The ISL6612BIRZ-T is a single-channel, high-side or low-side MOSFET/IGBT Gate Driver IC designed for power management applications such as power factor correction, battery charging, and automotive DC-DC converter applications. It is capable of driving a single MOSFET/IGBT up to 15A peak at a 5ns rise/fall time and 70mV drain-to-source voltage. It also features a protection network and an integrated power MOSFET/IGBT driver to ensure a fast turn-on and turn-off, as well as overvoltage protection. It is suitable for a wide range of applications, from power factor correction to DC-DC converters and LED dimming systems, making it a versatile and indispensable device in many industrial and consumer applications.

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