ISL6612IRZ

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PMIC (Power Management Integrated Circuits ) are an integral part of every electronic system. The ISL6612IRZ is a high-performance PMIC designed to provide control and protection for power MOSFETs used in a broad range of electronic systems. It features two drivers – one for the low side and one for the high side – for comprehensive control and protection of power MOSFETs.

The ISL6612IRZ is an integrated power MOSFET driver. It combines a high-side driver and a low-side driver in a single integrated circuit. The ISL6612IRZ is a gate driver that includes a current sense amplifier, a logic level output protection circuit, Over Voltage Protection (OVP), Under Voltage Protection (UVP), and an adjustable voltage level reference. It also includes a thermal shutdown circuit with an overtemperature fault detector output.

Application Field

The ISL6612IRZ is capable of operating in non-switch mode operation. This makes it suitable for applications requiring the low-side and high-side drivers to work simultaneously. It can be used in a variety of applications such as digital power supplies, LED drivers, motor drivers, power amplifiers, power management applications, inverters and solar panel tracking systems.

The ISL6612IRZ is also well suited for power MOSFETs requiring extended drain-to-gate capacitance requirements. It is designed for use with N-, P-, and dual-gate power MOSFETs such as MOSFETs used in logic level applications and low-side and high-side drivers.

Working Principle

The ISL6612IRZ gate driver includes two drivers: the high-side driver and the low-side driver. The high-side driver is used to turn on the top power MOSFET. The low-side driver is used to turn on the bottom MOSFET. The low-side and high-side drivers each include a logic level output protection circuit and an adjustable voltage level reference. The high-side driver is also equipped with an internal current sense amplifier and an overtemperature fault detector.

The high-side and low-side drivers are designed to reduce the need for external components typically needed for gate driving. The two drivers share a common ground and supply for convenient operation. The driver logic levels are pinned out separately for improved response time, allowing a faster switch IO from the logic input. The adjustable voltage level reference allows the voltage on the gate of the top MOSFET to be set to a predetermined level.

The ISL6612IRZ features advanced protection features to protect the system from various fault conditions. It features an Over Voltage Protection (OVP) circuit to monitor the voltage on the power MOSFET gates and shut off the power MOSFETs if the voltage exceeds a predetermined level. It also includes an Under Voltage Protection (UVP) circuit to shut off the power MOSFETs when the voltage on the gate of the top MOSFET goes below a certain level. Finally, it includes a thermal shutdown circuit with an overtemperature fault detector output, to protect the system from heating up and causing damage.

The ISL6612IRZ makes an excellent choice for a wide range of applications that require robust and reliable gate driving for power MOSFETs. It is a highly integrated solution that reduces the amount of external components, reduces system cost, and simplifies the power supply design and layout.

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