ISL6613AECB-T

Current - Peak Output (Source, Sink):	1.25A, 2A
Base Part Number:	ISL6613AE
Supplier Device Package:	8-SOIC-EP
Package / Case:	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 125°C (TJ)
Rise / Fall Time (Typ):	26ns, 18ns
High Side Voltage - Max (Bootstrap):	36V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	--
Voltage - Supply:	10.8 V ~ 13.2 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Synchronous
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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ISL6613AECB-T Application Field and Working Principle

The ISL6613AECB-T is a high current, low voltage gate driver designed for use with MOSFET applications that require high current gate switching at low gate drive voltages. It is suitable for various applications including high power RF amplifier designs, DCDC converters, battery packs, and telecom applications. In addition, it is designed to meet the needs of automotive, industrial, and communications markets. This article will explain the application fields and provide an explanation of the working principle of the ISL6613AECB-T.

Application Field of the ISL6613AECB-T

The ISL6613AECB-T is a high current, low voltage gate driver which makes it suitable for applications that require high current gate switching at low gate drive voltages. It is able to switch 4A of current over a wide range of gate drive voltages. This makes it suitable for use in a wide variety of high power RF amplifier designs, DCDC converters, battery packs, and telecom applications. In addition, the device is designed to meet the requirements of automotive, industrial, and communications markets.The main applications of the ISL6613AECB-T are in high power DCDC converter applications. It has been designed specifically to drive high power MOSFETs at low voltages. It is also suitable for use in high frequency applications due to its high current capability and low gate drive voltage. In addition, the device is suitable for use in telecom applications due to its high current and low voltage capabilities.

Working Principle of the ISL6613AECB-T

The ISL6613AECB-T is a high current, low voltage gate driver. It is able to switch up to 4A of current over a wide range of gate drive voltages. It is designed to meet the needs of automotive, industrial, and communications markets.The device has two output stages, a high side output (“H”) and a low side output (“L”). These two outputs are responsible for driving the gate of the MOSFET. The high side output is used to provide theGate drive voltage, while the low side output is used to provide the return path for the high side drive voltage.The device has two input stages, one for the high side (VIP) and one for the low side (VIL). The VIP input stage is used to provide the desired gate drive voltage while the VIL input is used to provide the return path for the gate voltage. The device also has an integrated Miller clamp circuit which limits the maximum voltage at the output stage during high current transitions. This ensures that the device remains within its operating parameters and that the MOSFET gates remain safe and protected from overvoltage conditions.The ISL6613AECB-T also features a slew rate control, which limits the rate at which the voltage transitions across the output stages. This helps to minimize electromagnetic interference, reduce noise, and reduce heat dissipation in the system.

Conclusion

The ISL6613AECB-T is a high current, low voltage gate driver designed for use with MOSFET applications that require high current gate switching at low gate drive voltages. It is suitable for various applications including high power RF amplifier designs, DCDC converters, battery packs, and telecom applications. In addition, it is designed to meet the needs of automotive, industrial, and communications markets. The device has two output stages, a high side output (“H”) and a low side output (“L”), as well as two input stages for driving the gate of a MOSFET. It also features an integrated Miller clamp circuit and a slew rate control.

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