ISL6613BCBZ-T Allicdata Electronics
Allicdata Part #:

ISL6613BCBZ-T-ND

Manufacturer Part#:

ISL6613BCBZ-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC BUCK 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: ISL6613BCBZ-T datasheetISL6613BCBZ-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 1.25A, 2A
Base Part Number: ISL6613B
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 26ns, 18ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 7 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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A PMIC - Gate Driver is a device that directly drives the gate of a power transistor. ISL6613BCBZ-T is an advanced three-channel Gate Driver integrated circuit (IC) with logic control functions for advanced power management applications. This device combines FET-device driver circuits and independent, adjustable bias source into a single IC, providing a compact solution for various applications such as DC-DC converters, power converters, lighting ballasts, switches, electronic loads, and other power management applications.

ISL6613BCBZ-T provides three drive output channels that independently drive an external power FET or IGBT with adjustable switching frequency. The device is also equipped with an SPI compatible 3-wire interface, which enables easy communication with the power management IC.

ISL6613BCBZ-T is optimized for driving the gate of an N-Channel MOSFET or an IGBT with a bidirectional current up to 2A while operating in the buck, boost, and SEPIC topologies. The device also offers protection against overpowering and short-circuiting.

ISL6613BCBZ-T provides multiple logic functions to control the external power MOSFETs or IGBTs and is capable of monitoring the output voltage, current, and temperature. It also offers a wide input voltage range, which allows the device to be used in various environments and applications.

ISL6613BCBZ-T’s working principle is based on the use of FET-device driver circuits and independent, adjustable bias source. The integrated power FETs and IGBTs are driven by independent voltage and current levels that are regulated by the built-in PWM controller. The independent regulated outputs can be adjusted through the SPI interface.

The biasing circuits are adjustable and offer a wide input voltage range that allows the device to be used in many different applications. The PWM controller contains three separate channels with independent control of the output current and voltage. The PWM controller also offers protection against short-circuiting and overpowering. In addition, the device also has thermal protection and under-voltage lockout circuitry to protect the connected power devices.

ISL6613BCBZ-T has a wide range of application fields. It can be used in various applications, such as DC-DC converters, power converters, lighting ballasts, electronic loads, and other power management applications. The device is also suitable for use in switch mode power supplies, LED lighting, and motor drives.

In conclusion, ISL6613BCBZ-T is an advanced N-channel MOSFET and IGBT Gate Driver IC with logic control functions. It combines FET-device driver circuits and independent, adjustable bias source into a single IC, providing a compact solution for various applications such as DC-DC converters, power converters, lighting ballasts, switches, electronic loads, switch mode power supplies, LED lighting, and motor drives.

The specific data is subject to PDF, and the above content is for reference

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