ISL6613BECB-T

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The integrated circuit ISL6613BECB-T falls under the category of PMIC - Gate Drivers. It is intended for the driving of high-side and low-side external MOSFETS in power management and battery charging applications. This integrated circuit serves as a main component of Li-Ion battery charger and is a popular choice for applications that require the simultaneous control of two or more power MOSFETs or the isolation of voltage levels utilizing four independent supply inputs. The ISL6613BECB-T can also be used in applications such as power converters, on-card chargers, and load switches. In addition, this integrated circuit has built-in features for protection against faults such as Short-to-Batt, Short-to-Gnd, Open batt and Over Curren.The main functionality of the ISL6613BECB-T revolves around its two built-in gate drivers, and two integrated P-type MOSFETS, which allow it to control a full H-bridge from two sources. In order to understand the working principle of this integrated circuit, let us first examine how it connects to external MOSFETS. The two gate drivers, labeled Driver1 and Driver2, are connected to the external low-side and high-side MOSFETs respectively. Driver1 is used to drive the low-side MOSFET, while Driver2 is used to drive the high-side MOSFET. The ISL6613BECB-T also includes three inputs, labeled Batt+, Batt-, and Driver-EN, which are used to control the device’s behavior.The Batt+ and Batt- inputs are used to detect the battery voltage levels, while the Driver-EN input is used to enable or disable the gate drivers. In addition, the ISL6613BECB-T includes two outputs, labeled VHigh and VLow, which are used to indicate the logic levels present at the outputs of the two integrated P-type MOSFETs. The Gate Drivers can be enabled or disabled using the Driver-EN input, and the Batt+ and Batt- inputs can be used to determine the battery voltage level.When the Batt+ and Batt- inputs are both at the same voltage, the internal circuits of the ISL6613BECB-T assume that the battery voltage is stable and will switch both the VHigh and VLow outputs to 0V. This causes the gate drivers to be enabled and the two integrated P-type MOSFETs to become active, allowing current to flow between the Batt+ and Batt- terminals. If the Batt+ and Batt- voltages are not the same, then the VHigh and VLow outputs will be driven to their respective values, turning off the gate drivers and preventing current from flowing.Moreover, the ISL6613BECB-T also includes a number of protection features that can be used to protect the device against external factors that can lead to current surges or shorts. These protection features make it well suited for use in applications that require battery charging or the control of multiple power MOSFETs. The ISL6613BECB-T is easy to use and integrate into any application, making it a popular choice for designers looking for a simple and efficient way to control power MOSFETs. With its combination of features and protection, the ISL6613BECB-T is well-suited for use in a number of different applications and can be used to provide reliable and efficient power control.

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