ISL6613EIBZ-T Allicdata Electronics
Allicdata Part #:

ISL6613EIBZ-T-ND

Manufacturer Part#:

ISL6613EIBZ-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC BUCK 8EPSOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC-EP
DataSheet: ISL6613EIBZ-T datasheetISL6613EIBZ-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 1.25A, 2A
Base Part Number: ISL6613
Supplier Device Package: 8-SOIC-EP
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 26ns, 18ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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ISL6613EIBZ-T, or ISL6613, is an integrated gate driver power module used in PMIC - Gate Drivers applications. It offers an optimized solution for driving n-channel MOSFETs and IGBTs in power-conversion systems such as AC-DC, DC-DC, AC-AC, and motor-control systems. ISL6613 integrates an isolated gate driver, power MOSFETs, an internal high-speed regulator, and a highly efficient controller, along with other components. This device ensures a cost-effective, low-resistance, and highly reliable solution.

ISL6613EIBZ-T has a reverse power protection feature that prevents the device from being damaged if the power supply is connected in the wrong direction. It also features a high switching frequency and high efficiency, allowing it to dissipate a minimal amount of heat. This device is also extremely flexible, with adjustable dead-time and switching frequency, enabling it to be optimized for different applications and perform in extreme conditions.

The working principle of the ISL6613EIBZ-T lies in its ability to drive the power connections of the MOSFETs and IGBTs properly. When the input signal is low, ISL6613 operates in a low-power mode and the power connections are held low. When the input signal is high, the device enters a high-power mode and the power connections to the MOSFETs and IGBTs are driven high. This helps to optimize switching efficiency and reduce the switching losses in the power management system.

ISL6613 features an optimized tight loop protection and fault monitoring circuitry, better efficiency and protection performance than conventional solutions. It has a low RDS(ON) of 2.3Ω (typical) and a wide input voltage range of 2.7V to 5.5V. The wide functional capabilities of ISL6613EIBZ-T makes it suitable for high-end industrial, power conversion, telecom, automotive, and medical applications.

Due to its high efficiency, low cost and flexibility, ISL6613EIBZ-T has become a popular choice for designers and system integrators for their power management solutions. It is also often used for critical applications in industries such as industrial automation, medical, telecom, renewable and transport systems, due to its reliable performance, durability and high-efficiency.

The specific data is subject to PDF, and the above content is for reference

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