IXBT12N300 Allicdata Electronics

IXBT12N300 Discrete Semiconductor Products

Allicdata Part #:

IXBT12N300-ND

Manufacturer Part#:

IXBT12N300

Price: $ 19.21
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 3000V 30A 160W TO268
More Detail: IGBT 3000V 30A 160W Surface Mount TO-268
DataSheet: IXBT12N300 datasheetIXBT12N300 Datasheet/PDF
Quantity: 67
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 17.46360
10 +: $ 16.15380
25 +: $ 14.84410
100 +: $ 13.79620
Stock 67Can Ship Immediately
$ 19.21
Specifications
Power - Max: 160W
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 1.4µs
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 62nC
Input Type: Standard
Switching Energy: --
Series: BIMOSFET™
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Current - Collector Pulsed (Icm): 100A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 3000V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXBT12N300 is a single IGBT with a nominal voltage rating of 1200 Volts, making it particularly well suited for high powered applications such as motor drives and variable speed applications. IXBT12N300 is a very popular component with a wide range of applications, owing to its excellent switching behaviour, low on-state voltage drop, and fast response time. In this article, we will be discussing the application field and working principle of IXBT12N300.

Application Field

IXBT12N300 offers a wide range of applications. It is commonly used in motor drives, variable speed applications, and other high-power electronic equipment. It can also be used for AC-DC and DC-DC converters, uninterruptible power supplies, and DC-AC inverter circuits. It can also be used in battery powered systems, solar powered systems, and in many industrial applications such as welding and induction heating.

The excellent switching behaviour of the component makes it ideal for applications requiring high switching frequencies. It can also be used in high power systems where high current ratings are required, such as in motor control and power distribution systems. IXBT12N300 is also used in AC or DC traction drives, and is popular in medical, aerospace and defense applications.

Working Principle

IXBT12N300 consists of an N+ doped silicon base region which contacts a gate terminal and an anode terminal. The N+ region is sandwiched between two N-type layers, and the gate terminal is connected to the N+ region via a resistor. When a positive gate voltage is applied, the N+ region turns on, allowing current to flow between the anode and the cathode. When the voltage is removed, the N+ region becomes non-conductive, thereby blocking current flow.

The IXBT12N300 also features a dynamic body diode which blocks reverse currents, preventing the transistor from breaking down due to excessive voltages. The body diode has a quick switching time and a low forward voltage drop, making it ideal for high frequency applications. The IXBT12N300 is designed to minimize losses in conduction and switching, resulting in high efficiency and low load losses.

The IXBT12N300 is an ideal solution for applications that require high power density, low and fast switching, and low on-state voltage drop. It is also well suited for high frequency applications that require fast switching times, such as motor drives and inverter circuits. The IXBT12N300 is a cost-effective solution that can provide high performance in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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