
IXBT12N300 Discrete Semiconductor Products |
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Allicdata Part #: | IXBT12N300-ND |
Manufacturer Part#: |
IXBT12N300 |
Price: | $ 19.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 3000V 30A 160W TO268 |
More Detail: | IGBT 3000V 30A 160W Surface Mount TO-268 |
DataSheet: | ![]() |
Quantity: | 67 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 17.46360 |
10 +: | $ 16.15380 |
25 +: | $ 14.84410 |
100 +: | $ 13.79620 |
Power - Max: | 160W |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 1.4µs |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 62nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | BIMOSFET™ |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 12A |
Current - Collector Pulsed (Icm): | 100A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 3000V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IXBT12N300 is a single IGBT with a nominal voltage rating of 1200 Volts, making it particularly well suited for high powered applications such as motor drives and variable speed applications. IXBT12N300 is a very popular component with a wide range of applications, owing to its excellent switching behaviour, low on-state voltage drop, and fast response time. In this article, we will be discussing the application field and working principle of IXBT12N300.
Application Field
IXBT12N300 offers a wide range of applications. It is commonly used in motor drives, variable speed applications, and other high-power electronic equipment. It can also be used for AC-DC and DC-DC converters, uninterruptible power supplies, and DC-AC inverter circuits. It can also be used in battery powered systems, solar powered systems, and in many industrial applications such as welding and induction heating.
The excellent switching behaviour of the component makes it ideal for applications requiring high switching frequencies. It can also be used in high power systems where high current ratings are required, such as in motor control and power distribution systems. IXBT12N300 is also used in AC or DC traction drives, and is popular in medical, aerospace and defense applications.
Working Principle
IXBT12N300 consists of an N+ doped silicon base region which contacts a gate terminal and an anode terminal. The N+ region is sandwiched between two N-type layers, and the gate terminal is connected to the N+ region via a resistor. When a positive gate voltage is applied, the N+ region turns on, allowing current to flow between the anode and the cathode. When the voltage is removed, the N+ region becomes non-conductive, thereby blocking current flow.
The IXBT12N300 also features a dynamic body diode which blocks reverse currents, preventing the transistor from breaking down due to excessive voltages. The body diode has a quick switching time and a low forward voltage drop, making it ideal for high frequency applications. The IXBT12N300 is designed to minimize losses in conduction and switching, resulting in high efficiency and low load losses.
The IXBT12N300 is an ideal solution for applications that require high power density, low and fast switching, and low on-state voltage drop. It is also well suited for high frequency applications that require fast switching times, such as motor drives and inverter circuits. The IXBT12N300 is a cost-effective solution that can provide high performance in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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