IXBT12N300HV

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXBT12N300HV is a type of insulated gate bipolar transistor (IGBT). IGBTs offer excellent low on-state voltage operation in medium voltage switching applications. As one of the most common properties of IGBTs, IXBT12N300HV can cut off significant current, while still offering good switching performance. Besides, it has low power dissipation capability.

IXBT12N300HV is usually used in a wide range of applications, such as switching power supplies, robotics, LED driver, HID lighting, servo system and other medium voltage applications. IXBT12N300HV can provide high efficiency, fast turn-on speed and high-reliability. It can also work in higher temperature environment, as it operates at temperature range up to 150°C.

A power transistor is a semiconductor device which is used to control power flow. The IXBT12N300HV is a power transistor which is composed of two primary elements: the emitter, which is the heart of the transistor; and the collector, which is connected to the emitter electrode. The emitter has a negative voltage and collects electrons, while the collector has a positive voltage and emits positive charge carriers called holes.

Electrons and holes then move towards the base of the transistor. When a base current flows between the emitter and the collector, it causes a depletion region in the base, which causes the current to flow. The collector current is dependent upon the base current, which is why it’s called the “transistor effect”. This transistor effect is used to control the on-state of the IXBT12N300HV.

The IXBT12N300HV is a n-channel Power IGBT with a high breakdown voltage of 300V and a high avalanche current capability. The IXBT12N300HV has a short turn-off time of 2.3μs, a typical on-state resistance of 7mΩ and a saturation voltage of 1.9V. This makes it suitable for high power applications such as uninterruptible power supplies and motor control.

The IXBT12N300HV is a relatively new type of IGBT, which has been developed to provide improved power dissipation characteristics and higher reliability. It provides low gate-emitter capacitance and a high input impedance, making it suitable for high frequency applications.

The IXBT12N300HV is a medium voltage switching device which stands out as a power component with higher efficiency, higher speed, and higher reliability as compared to other power components. Its wide operating temperature range and robust construction makes it suitable for applications that require high-reliability and long-life.

The specific data is subject to PDF, and the above content is for reference