IXBT42N170A Allicdata Electronics
Allicdata Part #:

IXBT42N170A-ND

Manufacturer Part#:

IXBT42N170A

Price: $ 13.14
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1700V 42A 357W TO268
More Detail: IGBT 1700V 42A 357W Surface Mount TO-268
DataSheet: IXBT42N170A datasheetIXBT42N170A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 11.94270
Stock 1000Can Ship Immediately
$ 13.14
Specifications
Switching Energy: 3.43mJ (on), 430µJ (off)
Base Part Number: IXB*42N170
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 330ns
Test Condition: 850V, 21A, 1 Ohm, 15V
Td (on/off) @ 25°C: 19ns/200ns
Gate Charge: 188nC
Input Type: Standard
Series: BIMOSFET™
Power - Max: 357W
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A
Current - Collector Pulsed (Icm): 265A
Current - Collector (Ic) (Max): 42A
Voltage - Collector Emitter Breakdown (Max): 1700V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXBT42N170A is a high voltage, low gate charge, low thermal resistance, high speed, IGBT (Insulated Gate Bipolar Transistor) in a single package. It is designed for high power switching applications such as motor control, power conversion, and power inverter. This IGBT has a voltage ratings of 1700V and is designed with low gate charge to minimize switching loss and maintain high energy efficiency.

The IGFET (Insulated Gate Field-Effect Transistor) is the basic building block of the IXBT42N170A IGBT. This transistor consists of three layers of semiconductor material, two of which are doped to form a "P-type" and "N-type" channels, separated by an insulating layer to prevent conduction between them. When the gate voltage, which is connected to the center layer, is applied, a channel is formed which allows current to flow between the P-type and N-type layers.

The IXBT42N170A IGBT has a fast switching speed, which is why it is best suited for high-power, high-frequency applications. Its fast switching speed allows for efficient energy conversion as well as for improved motor control and power conversion. The device also features low thermal resistance, which ensures a high degree of heat dissipation and extended device life. Low gate charge also minimizes switching losses, which increases energy efficiency and reduces power consumption.

The IXBT42N170A IGBT features the advanced PIMAV (Phase Independent Maximum Current) technology, which allows for higher efficiency in motor control and power conversion systems. PIMAV technology ensures that any application gains the maximum power efficiency, with minimum system disturbance. By eliminating the need for an additional voltage regulator, its control circuitry provides higher efficiency and quicker response times, as well as improved linearity.

The IXBT42N170A IGBT is available in several configurations and packages, such as TO-220FP, TO-262AA, and TO-3P packages. This device is ideal for applications where power conservation and efficiency are critical, such as motor control and power conversion, frequency converters, welding machines, and UPS systems. With its fast-switching speed, high voltage capabilities, and low thermal resistance, this IGBT is well-suited for high-power switching applications.

The specific data is subject to PDF, and the above content is for reference

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