Allicdata Part #: | IXBT16N170AHV-ND |
Manufacturer Part#: |
IXBT16N170AHV |
Price: | $ 8.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT |
More Detail: | IGBT 1700V 16A 150W Surface Mount TO-268HV |
DataSheet: | IXBT16N170AHV Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 7.28154 |
Input Type: | Standard |
Supplier Device Package: | TO-268HV |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 25ns |
Test Condition: | 1360V, 10A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/250ns |
Gate Charge: | 65nC |
Series: | BIMOSFET™ |
Switching Energy: | 2.5mJ (off) |
Power - Max: | 150W |
Vce(on) (Max) @ Vge, Ic: | 6V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 40A |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
IGBT Type: | -- |
Part Status: | Active |
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The IXBT16N170AHV is a single IGBT module designed for use in general power systems, in particular, the automotive industry. It is a very rugged device, with a low input gate threshold voltage, making it ideal for harsh environments. The IXBT16N170AHV, is an insulated-gate bipolar transistor (IGBT) with a breakdown voltage of 1700V, rated at 16A, and a small square package. This device is a type of field-effect transistor (FET) which combines the properties of an IGBT and a MOSFET. It is used in many high-power applications, such as power inverters, motor control and UPS systems.
This single IGBT module has an inherently low conductive resistance which makes it ideal for high-power applications and the square package provides a compact solution while improving cooling. The package size of the IXBT16N170AHV means that it can be used even in tight locations, where space is a major consideration. On top of this, the IXBT16N170AHV also has significant thermal capabilities, with a low thermal resistance, which improves its efficiency and reliability in a system.
The wiring of the device is relatively simple and the use of a fast-on connector is particularly useful for easy and reliable connections. Resistive loads should be used with the IXBT16N170AHV to ensure that the dissipated current is within the rated limits. The module includes a bypass diode which reduces the peak current during inductive loads. In addition, a freewheeling diode must be added in parallel to ensure soft switching during commutation.
In terms of its working principle, the IXBT16N170AHV works by using the gate control similar to that of a MOSFET. The built-in gate drive circuit is capable of handling high gate capacitance, enabling the device to drive large amounts of gate voltage. This gate voltage is then used to switch the current flow in the device on and off, which allows the device to be used in applications such as motor control and switched mode power supplies.
In conclusion, the IXBT16N170AHV is an excellent device for use in a number of high-power applications in the automotive and general industries. Its low on-state resistance, small size and robust power dissipation capabilities make it one of the most reliable IGBT modules on the market, capable of handling large amounts of gate voltage and backed up by a fast-on connector for secure connections. As such, the IXBT16N170AHV is the ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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