IXBT6N170 Allicdata Electronics
Allicdata Part #:

IXBT6N170-ND

Manufacturer Part#:

IXBT6N170

Price: $ 5.38
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1700V 12A 75W TO268
More Detail: IGBT 1700V 12A 75W Surface Mount TO-268
DataSheet: IXBT6N170 datasheetIXBT6N170 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 4.88187
Stock 1000Can Ship Immediately
$ 5.38
Specifications
Power - Max: 75W
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 1.08µs
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 17nC
Input Type: Standard
Switching Energy: --
Series: BIMOSFET™
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 6A
Current - Collector Pulsed (Icm): 36A
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 1700V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXBT6N170 is an IGBT module developed by Infineon Technologies. It is a single IGBT with a voltage rating of 1700V and current rating of 17A. The module has a reverse stand-off voltage of 1750V and a forward on-state voltage drop of 2.4V at 17A. It is housed in a TO-247 package and is specifically designed for renewable energy applications like photovoltaic, battery, and rectifier applications.

Applications of IXBT6N170

The IXBT6N170 is an ideal choice for a range of power electronic applications. It is mainly used in renewable energy applications such as photovoltaics and rectifiers. Its key characteristics of high blocking voltage and low forward voltage drop makes it perfect for rectifying high voltage AC line to low voltage DC line converted applications. This module is especially useful in applications where efficient power conversion is of utmost importance. Besides this, the IXBT6N170 module can also be used in various other applications such as motor drives, induction heating, power factor correction, UPS, welding and furnace applications, battery chargers, and more.

Working principles of the IXBT6N170

The working principle of any IGBT is the same and is based on the same principle as that of a MOSFET. An IGBT is basically a MOSFET with an additional layer which helps in controlling the current flow. The working of an IGBT module involves two distinct processes: switching and current conduction. When in its on-state, the device behaves like a transistor, allowing electrons to flow through the base-emitter junction. When the N-channel JFET is in its off-state, the device acts like a diode, blocking current flow.The IXBT6N170 module also works on a similar principle. It has two distinct modes, an on-state and an off-state. When in its off-state, the IXBT6N170 acts as an open switch and does not allow the current to pass through. In its on-state, the device behaves like a transistor, allowing electrons to flow.

Conclusion

The IXBT6N170 is an IGBT module developed by Infineon Technologies. It is specifically designed for robust renewable energy applications involving photovoltaics and rectifiers. The module has a reverse blocking voltage of 1700V and a forward on-state voltage drop of 2.4V at 17A. It is capable of operating at a junction temperature of up to 175°C. Its solid-state design ensures a reliable operation, making the IXBT6N170 one of the most commonly used IGBTs for a variety of industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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