IXBT20N300 Allicdata Electronics
Allicdata Part #:

IXBT20N300-ND

Manufacturer Part#:

IXBT20N300

Price: $ 22.39
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 3000V 50A 250W TO268
More Detail: IGBT 3000V 50A 250W Surface Mount TO-268
DataSheet: IXBT20N300 datasheetIXBT20N300 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 20.35450
Stock 1000Can Ship Immediately
$ 22.39
Specifications
Power - Max: 250W
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 1.35µs
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 105nC
Input Type: Standard
Switching Energy: --
Series: BIMOSFET™
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
Current - Collector Pulsed (Icm): 140A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 3000V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXBT20N300 application field and working principle

IXBT20N300 is a type of Insulated Gate Bipolar Transistor, commonly known as an IGBT, and is part of the Single category. It is widely used for household and industrial applications, and offers enhanced performance regarding switching speed, power loss and noise, compared to other alternative types of transistors.

An IGBT is a hybrid of a bipolar and power MOSFET transistor. It uses a combination of electrons and holes as a majority and minority carriers. The IXBT20N300 comes in a power package, which makes it can be used with higher currents and voltages. It is usually used as a switching device in many circuits and electronic products, such as solar panel power converters, power module inverters, motor drives, telecom rectifiers, etc.

The working principle of the IXBT20N300 is primarily based on the construction of an IGBT. It has two terminals, namely the collector and the emitter, and an insulated gate between them. When a current is applied to the gate, electrons are attracted to the gate and a voltage is created across the two terminals, allowing current to flow freely.

When the gate voltage is raised, the current across the gate-emitter junction is increased, and then it reaches the switching threshold, leading to a positive temperature coefficient. The IXBT20N300 is specially designed to allow high current densities with low gate charge and switching losses. In other words, it works by boosting the performance of switching applications for higher current densities.

The IXBT20N300 also has other features such as high di/dt immunity and low on-state losses, which make it a preferred choice for high-speed power switching circuits. It supports an adjustable frequency range of up to 250 kHz and is able to support high voltage breakdown ratings of up to 900V. This makes it ideal for a variety of industrial applications, including solar energy conversion systems and home appliances.

In conclusion, the IXBT20N300 is an IGBT device that is part of the Single category. It offers great performance for household and industrial applications, including solar energy conversion systems and home appliances. Its features, such as high di/dt immunity and low on-state losses, make it an ideal choice for high-speed power switching circuits. The IXBT20N300 can also support high voltage breakdown ratings and adjustable frequency range, making it suitable for numerous applications.

The specific data is subject to PDF, and the above content is for reference

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