IXBT24N170 Allicdata Electronics
Allicdata Part #:

IXBT24N170-ND

Manufacturer Part#:

IXBT24N170

Price: $ 13.70
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1700V 60A 250W TO268
More Detail: IGBT 1700V 60A 250W Surface Mount TO-268
DataSheet: IXBT24N170 datasheetIXBT24N170 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 12.44880
Stock 1000Can Ship Immediately
$ 13.7
Specifications
Power - Max: 250W
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 1.06µs
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 140nC
Input Type: Standard
Switching Energy: --
Series: BIMOSFET™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Current - Collector Pulsed (Icm): 230A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 1700V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXBT24N170 is a range of insulated gate bipolar transistors (IGBTs) from the IXYS Corporation. It has been specifically designed for single-phase applications such as contactors, relays, solenoid drivers, switched-mode powers supplies, UPS systems, short circuit protection, motor drives and electric vehicle power.

The IXBT24N170 is an IGBT in the package rated at 1700V and features low switching losses, minimal to lower EMI emission and superior current capability. It has a very simple primary side gate drive which minimizes total system cost. Its simple gate drive structure makes this device a preferred choice in the medium to high-power applications.

The IXBT24N170 features a zero-cross turn-on, ultra-fast switching and low on-state loss. Its parasitic capacitances facilitate fast switching without high frequency spikes that would otherwise lead to EMI problems. This device also features an auxiliary drive circuit common-mode voltage generation which ensures compatibility with TTL logic and reduces the number of additional components.

The IXBT24N170 is available in three configurations - NPN, PNP and Darlington - making it suitable for various switching applications. When it comes to the working principle, the IXBT24N170 works in the same way as a power MOSFET, by allowing current to flow when a voltage is present between the drain and source. This is known as " enhancement-mode operation" and is achieved through the controlled application of a gate voltage.

The IXBT24N170 IGBT is designed specifically for single-phase applications and is capable of controlling large current surges. It can handle up to 500A of current while maximizing conduction capabilities. In addition, the IXBT24N170 features low forward voltage drop, low thermal resistance and superior switching performance. The package options available for this IGBT make it suitable for a wide variety of power electronic applications.

The IXBT24N170 is the perfect choice for a variety of applications, from low frequency motor drives to high speed switched-mode power supplies. It has been designed for high-power applications and is capable of handling large current surges with minimal losses. Its simple gate drive structure also makes it an ideal choice for single-phase applications such as contactors, relays, switching mode power supplies and UPS systems.

The specific data is subject to PDF, and the above content is for reference

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