IXFY26N30X3

Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	170W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1.465nF @ 25V
Vgs (Max):	±20V
Series:	HiPerFET™
Vgs(th) (Max) @ Id:	4.5V @ 500µA
Rds On (Max) @ Id, Vgs:	66 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	26A (Tc)
Drain to Source Voltage (Vdss):	300V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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Introduction

The IXFY26N30X3 is a high voltage lateral N-channel enhancement-mode field-effect transistor (FET). This type of FET transistor was developed to provide monolithic high-voltage power MOSFET applications in medium-power switching and low-power amplification. This transistor is suitable for operating in −55°C to 150°C temperature range and in frequencies up to 100kHz. It uses a high-voltage N-channel metallic-oxide semiconductor structure, and is a typical depletion-type FET.

Design and Construction

The metal-oxide-semiconductor FET is a three-terminal device with source (S), drain (D) and gate (G) electrodes. The source and drain are typically connected to the drain source across the chip, and a gate voltage is used to modulate the flow of current between the source and the drain. It consists of a substrate with two metal oxide layers on it. The two layers are connected through a conductivity path and are surrounded by a dielectric layer. The gate is connected to a metal oxide semiconductor layer, which allows the transistor to control the current flow between the source and drain. The IXFY26N30X3 has an ESD rating of 2kV Human Body Model (HBM). It also includes a built-in protection circuit, which limits the maximum current that can flow through the device. The device is fabricated through a low-cost and high-reliability manufacturing process.

Operation

The IXFY26N30X3 transistor operates by allowing current to flow through the channel when a gate voltage is applied to its control terminal. The gate voltage modulates the conductance of the channel and the applied gate voltage affects the threshold voltage of the transistor. When a positive gate voltage is applied, the resistance in the channel decrease and more current can flow through it. Conversely, when a negative gate voltage is applied, the resistance in the channel increases and less current can flow through it.The IXFY26N30X3 can be operated in either an enhancement or a depletion mode. The enhancement mode operates when a positive gate voltage is applied and the drain source current is increased. The depletion mode, on the other hand, operates when a negative gate voltage is applied and the drain source current is reduced.

Applications

The IXFY26N30X3 device is used in a wide range of power electronics applications including power switching circuits, power converters, motor-driving systems, DC/DC converters, LED lighting, lamp ballasts, high-side load switching, sub-bottle regulation, and pressure and flow controllers. It is also used in automotive electronic modules such as Automotive Body Control Modules (BCM’s) and Vehicle Control Modules (VCM’s).

Advantages

The IXFY26N30X3 transistor offers several advantages over other types of FETs, such as: - High voltage breakdown: The IXFY26N30X3 has a breakdown voltage of >26 kV, which provides good protection against short circuits and extreme overvoltage conditions.- Low gate capacitance: Compared to other type of FETs, the IXFY26N30X3 has a relatively low gate capacitance, which provides faster switching times and reduces switching losses. - High-temperature operation: The IXFY26N30X3 is designed for operation at temperatures up to 150°C, so it can be used in applications requiring high-temperature operation.- Low conduction loss: The IXFY26N30X3 has low on-state resistance, so it can reduce conduction losses and improve efficiency.

Disadvantages

The IXFY26N30X3 has several drawbacks, such as:- High price: The IXFY26N30X3 FET is relatively expensive compared to other FETs.- High leakage current: The IXFY26N30X3 has relatively high leakage current, which can be an issue in some applications.- Difficult to control: The IXFY26N30X3 is difficult to control and its operation is temperature-sensitive, so it may require additional circuitry or special considerations when used.

Conclusion

In conclusion, the IXFY26N30X3 is a high-voltage lateral N-channel enhancement-mode field-effect transistor with high breakdown voltage, low gate capacitance, high-temperature operation, and low conduction loss. It is used in a wide range of power electronics applications and provides numerous advantages, but comes at a high price and has high leakage current.

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