IXFY30N25X3

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The IXFY30N25X3 MOSFET Transistor is a member of the 30V N-Channel Enhancement Mode Field Effect Transistor/MOSFET family. It is mostly used in power conversion, power management, and switch-mode designs, particularly in defense and aerospace applications. This FET is an enhancible N channel power MOSFET. It has been developed using advanced Infineon’s trench technology, offering high performance in terms of RDS(on), Carriers mobility accuracy and fast switching speeds.

The IXFY30N25X3 Transistor is a monolithic device that has a drain-source cutoff voltage (VGS0= VGS0 of <2V). It is suitable for low side switch applications where fast switching is required. This FET boasts of a maximum drain current (ID) of 23A and a maximum drain-source voltage (VDS) of 30V. It has an excellent RDS(on) of 0.011Ω at VGS=10V and 0.015Ω at VDS=25V.

The working principle behind the IXFY30N25X3 Transistor is simple yet effective. It works on the principles of voltage and current flow in transistors. When a voltage is applied to the gate, it causes electrons to be attracted towards the source (N+), creating a conductive path between the source and drain. This allows current to pass through, which in turn creates a magnetic field around the transistor and turns it “on”. When the external voltage is removed, the transistor returns to its off configuration.

The IXFY30N25X3 has great application potential due to its wide operating range, excellent switching speed and low on-state resistance. As a result, it can be used in a variety of power applications such as power supplies and motor control. It is also suitable for automotive, audio, and communication systems, as well as robot and industrial applications. Additionally, due to its low on-state resistance, the IXFY30N25X3 offers a high level of efficiency for applications that require low voltage and high current switching.

In conclusion, the IXFY30N25X3 is a great choice for use in high-power and switch-mode designs. Its low on-state resistance and fast switching speeds make it an ideal component for high efficiency applications. Furthermore, its drain to source cutoff voltage makes it highly suitable for use in low side switch applications. As a result, it is widely used in a variety of power-related applications and industrial settings.

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