IXGH24N170AH1 Allicdata Electronics
Allicdata Part #:

IXGH24N170AH1-ND

Manufacturer Part#:

IXGH24N170AH1

Price: $ 16.49
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1700V 24A 250W TO247AD
More Detail: IGBT NPT 1700V 24A 250W Through Hole TO-247AD (IXG...
DataSheet: IXGH24N170AH1 datasheetIXGH24N170AH1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 14.99020
Stock 1000Can Ship Immediately
$ 16.49
Specifications
Switching Energy: 2.97mJ (on), 790µJ (off)
Base Part Number: IXG*24N170
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 200ns
Test Condition: 850V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 21ns/336ns
Gate Charge: 140nC
Input Type: Standard
Series: --
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
Current - Collector Pulsed (Icm): 75A
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 1700V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Last Time Buy
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGH24N170AH1 transistors are commonly used in applications like automotive, solar panel power inverters, industrial motor drives, server power supplies and now also in aircrafts which were mainly using IGBT transistors for efficient power generation. This single IGBT device features a super rugged C3M technology and a fast turn-on/turn-off time which makes it well suited for high switching frequency related applications. As an addition to this, this IGBT has an advantage of low noise, low gate charge and excellent gate turn off performance.

At its fundamental level, IXGH24N170AH1 is a voltage-controlled semiconductor switch typically used to alternate between two energy states. This switching mechanism is achieved by the switching nature of the bipolar junction transistor (BJT) embedded in the IGBT device. This BJT works by utilising the minority charge carriers, in this case electrons, to either block the current or allow it to flow through the device.

The IXGH24N170AH1 also possesses a miller effect, which is the ability to reduce the maximum forward voltage drop by increasing the collector current. This helps the power device to operate longer in heavy demand applications by reducing its power losses. The device also features an increased saturation voltage to ensure that the device does not switch off at high-current or short-circuit situation.

Explaining the operation of IXGH24N170AH1 it can be understood from the I-V curve of the device. The current through the device starts to increase as the voltage is increased up to the threshold voltage. Above this, the device has a linear region where the current increases due to the minority carriers, electrons. This region is known as the linear region and is followed by the saturation region. The saturation region is where the current is not dependent on the applied voltage. This is because the electrons are now majority carriers and the device operates in the current mode.

A simplified circuit of IXGH24N170AH1 can be represented as a voltage-controlled switch. The gate is used to control the switch and the collector is used to sense the current, with the emitter used as the load. The collector-emitter voltage is used to control the switch and is applied across the device. If a logic one is applied to the gate and the collector is the load then it will be turned on and will allow current to flow between the collector and the emitter. If a logic zero is applied to the gate, then will be turned off and will not allow current to flow.

In conclusion, IXGH24N170AH1 is a single IGBT device used in applications related to automotive, solar panel power inverters, industrial motor drives, server power supplies and also in aircrafts. Its feature of fast turn-on/turn-off time helps in applications related to high switching frequency. It also features a super rugged C3M technology for better performance and low gate charge for reduced power losses. It also features a miller effect and increased saturation voltage for long-term applications. Its operation can be understood from the I-V curve of the device and is represented as a voltage-controlled switch.

The specific data is subject to PDF, and the above content is for reference

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