IXGH56N60B3D1 Allicdata Electronics
Allicdata Part #:

IXGH56N60B3D1-ND

Manufacturer Part#:

IXGH56N60B3D1

Price: $ 4.82
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 330W TO247
More Detail: IGBT PT 600V 330W Through Hole TO-247AD (IXGH)
DataSheet: IXGH56N60B3D1 datasheetIXGH56N60B3D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 4.38018
Stock 1000Can Ship Immediately
$ 4.82
Specifications
Switching Energy: 1.3mJ (on), 1.05mJ (off)
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 100ns
Test Condition: 480V, 44A, 5 Ohm, 15V
Td (on/off) @ 25°C: 26ns/155ns
Gate Charge: 138nC
Input Type: Standard
Series: GenX3™
Power - Max: 330W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 44A
Current - Collector Pulsed (Icm): 350A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGH56N60B3D1 is a modern transistor device with many applications. This article will discuss its application field and working principle.

IXGH56N60B3D1 belongs to the family of Integrated Gate Bipolar Transistors (IGBTs), a single component device. It is characterized by the combination of field-effect and bipolar technologies, which allows it to exhibit the properties of both, making it suitable for a wide range of applications.

As a single component device, the IXGH56N60B3D1 employs a construction which is similar to that of a MOSFET, but with the added advantage of being able to support much higher voltage and power dissipation. This makes it ideal for applications such as industrial motor control and inverters, as it can reliably switch higher power signals.

The IXGH56N60B3D1 is also widely used in the automotive industry. It can be used to regulate the electrical supply to the various components of a car, such as its headlights and its engine. This ensures that the car does not consume large amounts of electrical power when it is not in use, making it more efficient and allowing it to run for longer periods of time.

The working principle of the IXGH56N60B3D1 is based on the operation of a MOSFET. When an electrical signal is applied to the gate of the device, an electric field is generated, which is used to modulate the flow of current between the source and drain of the transistor. This allows the IXGH56N60B3D1 to control the amount of current passing through it, making it suitable for controlling various electrical signals.

In summary, the IXGH56N60B3D1 is a single component device belonging to the family of Integrated Gate Bipolar Transistors (IGBTs). It is widely used in industrial motor control and automotive applications, due to its ability to handle high voltages and power dissipation. The working principle of the IXGH56N60B3D1 is based on the operation of a MOSFET, allowing it to regulate the flow of current in various electrical systems for power control.

The specific data is subject to PDF, and the above content is for reference

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