IXGH24N170

IXGH24N170 is one of the advanced field-stop insulated gate bipolar transistors (IGBT) and it is categorized as single type IGBT devices. This transistor is usually used to carry high power but relatively low frequency applications, such as AC motor control, UPS, solar energy, aircraft power, industrial and converter power management. It allows high current, high voltage and low on-state voltage drop, making it very suitable for many power control applications.

The IXGH24N170 contains a vertical N-channel MOSFET and a vertical PNP bipolar junction transistor embedded in silicon, the junction oxide of which is heavily passivated with silicon oxide. The embedded MOSFET allows smooth and fast switching during switching of the transistor. The embedded PNP transistor helps to reduce the turnout loss and thus, improve the product performance. Apart from the embedded structures, other external structures such as V DCB protection circuit and gate driver/emitter protection circuit are mounted as well.

The working principle of the IXGH24N170 is based on the voltage-controlled current source. When a voltage is applied to the gate of the transistor, the gate-source voltage (Vgs) will reduce the on-state resistance (Rds) at the source-drain path. As a result, a lower voltage drop appears at the source-drain path and a current (Ic) occurs through the transistor. This current is proportional to the voltage applied to the gate (Vgs). The lower the Vgs, the higher the Ic. The Ic is then used in power control applications, such as switching DC power supply, driver circuit of motors and many other applications.

The IXGH24N170 has many advantages over other IGBTs. It has high current capability with low on-state voltage drop and thus, allowing power control with high efficiency. It also has low gate charge, low gate switching losses and fast turn-on/off time, allowing higher frequency applications. Furthermore, IXGH24N170 has an internal temperature detection circuit, which helps to monitor the temperature of the device, avoiding potential damages caused by overtemperature.

In conclusion, the IXGH24N170 is an advanced single type IGBT which combines the N-channel MOSFET and PNP transistor embedded in silicon to ensure higher efficiency and better performance. This transistor is usually be used in power control applications and it allows fast switching and voltage control for higher efficiency. Furthermore, its built-in heating detection circuit makes it even more efficient and safe for users.