IXGH20N140C3H1

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The IXGH20N140C3H1, from Infineon\'s CoolMOS C3 Superjunction family of IGBT transistors, is designed for use within high-speed motor control, welding, uninterruptible power supplies, power conversion and many other applications that require high switching speed, low noise and soft switching capability under full load. This single IGBT transistor has a maximum junction temperature of 175°C, is rated for 63A at a typical saturation voltage of 1000V, provides excellent dynamic performance, and is ideal for high-vibration applications and audio frequency (AF) systems due to its low noise immunity.

The IXGH20N140C3H1 comprises four sub-elements, each with its own measured characteristics, depending on the level of electric force and current passing through it. Essentially, the transistor is made up of two MOSFETs which are connected in parallel with two p-type electrodes and two n-type electrodes. This parallel connection of two MOSFETs creates a highly efficient switch with excellent performance in terms of high-frequency operation, low gate charge, and low ratings in terms of stored charge and gate voltage.

The basic operating principle of the IXGH20N140C3H1 is that a positive voltage at the gate G turns the transistor on, allowing the flow of current from collector C to emitter E. The voltage of the gate affects the current flow and the voltage of collector and emitter in turn. As the voltage of the gate G increases, the current from collector to emitter will decrease.

The IXGH20N140C3H1 is designed for use in motor control and uninterruptible power supplies, power conditioners, power supplies, welding machine, home appliances, audio frequency (AF) systems, UPS, and many more fields. Its characteristics make it suitable for applications involving high-speed switching, high-temperature operation, noise immunity, and soft switching. Also, its low gate charge, low stored charge, and low gate voltage make it suitable for high-vibration applications. Additionally, it is suitable for audio frequency systems, due to its low noise immunity.

The IXGH20N140C3H1 utilizes the proprietary CoolMOS C3 Superjunction technology which delivers a wide range of technical benefits for users. This includes an integrated diode that reduces switching losses, a more efficient electromagnetic field and a lower stray capacitance. For high-speed applications, the low parasitic drain-source capacitance reduces switching losses and switching noise. This leads to faster switching and higher switching frequencies, as well as minimum power losses.

The IXGH20N140C3H1 is a highly efficient single IGBT transistor with excellent performance in terms of high frequency operation, low gate charge, low stored charge and low gate voltage. It is designed for use in high-speed motor control, welding, uninterruptible power supplies, power conversion and many other applications. With its integrated diode, high temperature operation, noise immunity and soft switching capabilities, it is a well suited for a wide range of applications.

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