IXGH4N250C

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An IXGH4N250C IGBT is a type of power semiconductor typically used in applications that require high power transmission capability. It is designed to handle large current and voltage ratings, and to provide excellent thermal performance.

Design

The IXGH4N250C is a single IGBT (Insulated-Gate Bipolar Transistor) of the IGBT family in the Power Block series, developed by IXYS Corporation. The device is a four-layer device (N-channel), composed of a single IGBT and a Schottky anti-parallel diode.

The device has an active area of 5.6 x 4.6 mm2 with a total device size of 7.9 x 7.9 mm2. It was designed using IXYS\' proprietary Q5 technology, the fifth generation of their VCSEL (Vertical-Cavity Surface-Emitting Laser) power process.

Application Field

The IXGH4N250C has a variety of applications due to its superior characteristics. It is used to switch high power in several industrial applications such as power supplies, rectifiers, automotive control systems, renewable energy systems, motors, UPS systems, and many others. It is also beneficial in robotics, where its exceptional performance and low on-state resistance (RDSon) proves advantageous.

The IXGH4N250C also finds a wide range of applications in the telecom, automotive and railway industries due to its suitability for high frequency driving. Additionally, its high surge ratings make it suitable for motor drive inverters and switching power converters.

Working Principle

The IXGH4N250C functions using the principle of an Insulated-Gate Bipolar Transistor. When a voltage difference is applied across the device, an electric field is created between the collector and the emitter terminals. This electric field causes a corresponding current to flow through the IGBT, thus controlling the amount of power transmitted.

The current passes through the layer of insulation between the base and the emitter, which allows for the amplification of the current. The device is also equipped with a Schottky diode, which prevents any reverse currents from being passed through the device and damaging it.

The IXGH4N250C is able to offer superior performance due to its integrated circuit packaging system that reduces EMI (electromagnetic interference), improves thermal characteristics and allows for the device to handle large current ratings. Its energy efficiency is also improved by its bidirectional current flow of up to 700A, and its reverse recovery time of 15ns.

Conclusion

The IXGH4N250C IGBT is a single power device, designed for applications that require high power transmission capabilities. Its superior performance is achieved via its integrated circuit packaging system and bidirectional current flow. It is used in a wide range of applications, from basic power supplies, rectifiers, UPS systems and motor drives to industrial applications such as robotics and automotive control systems.

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