IXGH28N140B3H1 Discrete Semiconductor Products

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The IXGH28N140B3H1 is a power semiconductor device and is a member of the IGBT family. This IGBT is designed for use in low- to medium-voltage applications and offers a variety of advantages over traditional transistors. This article will provide a brief overview of the application field and working principle of the IXGH28N140B3H1 power semiconductor.

The IXGH28N140B3H1 is a general-purpose IGBT used in low- to medium-voltage applications such as motor drives, power converters, and automotive applications. The IGBT has a maximum Collector-Emitter Voltage (VCES) of 1400 volts, a Gate-Emitter Voltage (VGE) of 28 volts, and an On-State Drain Current (Ic) of 120A. The IXGH28N140B3H1 is suitable for use in a wide range of applications, including DC-DC converters, AC-DC converters, motor drives (such as the application of electric vehicles), elevator control systems, and switched-mode power supplies.

The IXGH28N140B3H1 is a three-terminal power device consisting of a N-channel MOSFET gate, a PN-junction collector, and a PN-junction emitter. The device is usually operated in the on-state by controlling the voltage between the gate and the emitter. When this voltage is increased to a certain level — known as the threshold voltage — the device will begin to conduct current, allowing it to control the larger current passing through the device. The IXGH28N140B3H1 can also be operated in the off-state; when the gate-emitter voltage is reduced below the threshold value, the channel is turned off and no current can pass through it.

The IXGH28N140B3H1 is a minority-carrier device and its operation is based on the injection of minority carriers into the device. In order for this operation to be successful, the MOSFET gate must be appropriately biased such that it creates a potential difference between the collector and the emitter. When this occurs, the minority carriers are injected into the device, resulting in the transfer of charge carriers between the N-channel and the P-channel regions. This process is known as minority-carrier injection and is the basis of IGBT operation.

In addition to its inverter-type applications, the IXGH28N140B3H1 can also be used in reverse-parallel circuits. In this configuration, two IXGH28N140B3H1’s are connected anti-series, such that the Forward Voltage of one IGBT is equal to the Reverse Voltage of the other. This type of connection allows for the control of higher voltages and currents, while also providing protection against reactive energy present in the applications. Furthermore, this configuration can also be used to provide a rapid, soft-switching function.

The IXGH28N140B3H1 is an ideal choice for low- to medium-voltage applications where a fast switching speed and high efficiency are required. The device’s fast switching speed, low input voltage, and the ability to support a reverse-parallel configuration make it an attractive option for motor control, power converters, and automotive applications. Furthermore, its ability to operate in either the on-state or off-state adds to its versatility and makes it a good choice for a variety of applications.

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