IXKR25N80C

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IXKR25N80C is a state-of-the-art device from Infineon Technologies. It is a 4-pin single-ended N-channel MOSFET in a PowerFLAT-5XS package, making it suitable for applications that require a higher power density and a lower profile. The device is designed to offer robust performance with low on-resistance and provides a very low gate-charge. It is suitable for switched-mode power supply (SMPS), lighting applications such as Class 2/Unclassified, DC/DC converters, motor control and other low voltage applications.

The IXKR25N80C offers a drain current of 25A working at 75°C. It is designed to have a total gate charge (Qgatetot) of 11.5 nC max and a drain-source breakdown voltage (BVdss) of 800 VDS what is more, it also has a very low RDS(on) of 0.06 at 4 VGS, making this device an ideal solution for high-currents, low-voltage applications.

The working principle of the IXKR25N80C can be understood conceptually as follows. When an electric field is applied to the top and the bottom of the semiconductor material, a voltage is established and electrons are attracted from the source through the region between the gate and the source. This creates an electric current in the region between the source and the drain, causing the device to conduct current.

Since the gate of the MOSFET is insulated from the channel, when a small voltage is applied to the gate it generates a much larger electric field, thus allowing small control signals to switch large currents. The small control signals have to have very low leakage currents and they must be accurately regulated to ensure stable operation.

In addition, it is important to note that these devices have an intrinsic body diode which conducts current in the reverse direction when the voltage across the drain and source becomes reversed. Therefore, when implementing an IXKR25N80C, it is important to make sure that the body diode can safely handle the current in the reverse direction.

The IXKR25N80C is a versatile device with a wide range of applications. Its low gate charge, low resistance, and high-temperature operating range make it a perfect choice for high-power, low voltage switching applications such as Class 2/Unclassified, Lighting, DC/DC converters, Home Appliances, SMPS, and Motor Control. In addition, it is also suitable for a variety of other low voltage applications.

In summary, the IXKR25N80C is a highly efficient, single-ended N-channel MOSFET with a drain current of 25A and a very low on-resistance (RDS(on)). It is designed to have low gate charge and a high operating temperature range, making it an ideal choice for high-power, low voltage switching applications. With its wide range of applications, the IXKR25N80C is the perfect device for any low voltage application.

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