Allicdata Part #: | IXKR40N60C-ND |
Manufacturer Part#: |
IXKR40N60C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 38A ISOPLUS247 |
More Detail: | N-Channel 600V 38A (Tc) Through Hole ISOPLUS247™ |
DataSheet: | IXKR40N60C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 3mA |
Package / Case: | ISOPLUS247™ |
Supplier Device Package: | ISOPLUS247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | Super Junction |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXKR40N60C is a MOSFET transistor, more specifically an insulated-gate type. It is part of a family of devices known as “enhancement mode” Field Effect Transistors (FETs). MOSFETs allow for efficient power delivery, as these transistors provide a large output current conduction channel from input to output.The IXKR40N60C is a high current device that offers excellent stability and thermal characteristics. It allows for high performance and efficiency in a wide range of applications including automotive electronics and power supply units.The IXKR40N60C is a single n-channel MOSFET, meaning the output current is obtained when the gate voltage is greater than the source-drain threshold voltage. The maximum drain-source voltage of the device is 600V, with a gate-source voltage of 20V. The device can handle up to 40A of current, allowing for efficient power transfer.The IXKR40N60C MOSFET works by using the gate voltage to control the on-off state of the output current. The gate voltage allows for current to flow from the drain to the source when the gate voltage is greater than the threshold voltage; when the gate voltage is below the threshold, current does not flow from drain to source. This allows for current to be controlled in a very efficient manner, without the need for complex circuitry or additional components.The IXKR40N60C is also equipped with a fast switching speed, allowing for a high speed power transfer. This feature also helps to improve efficiency, as the MOSFET can switch rapidly between on and off states.The IXKR40N60C is a versatile device, suitable for a number of applications, such as Automotive, UPS, Solar and DC motor drives, and consumer electronics. Such applications benefit from the fast switching speed and high current handling capability of the device. In addition, the IXKR40N60C provides a robust and reliable option in harsh operating environments, due to its excellent thermal resistance and stability.Overall, the IXKR40N60C is a high performance device with excellent switching and current handling capabilities, making it suitable for a wide range of applications. It provides an efficient and robust power delivery solution with a fast switching speed, stability and thermal resistance.
The specific data is subject to PDF, and the above content is for reference
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