Allicdata Part #: | IXRFSM12N100-ND |
Manufacturer Part#: |
IXRFSM12N100 |
Price: | $ 19.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS-RF |
Short Description: | 2A 1000V MOSFET IN SMPD PACKAGE |
More Detail: | N-Channel 1000V 12A (Tc) 940W Surface Mount 16-SMP... |
DataSheet: | IXRFSM12N100 Datasheet/PDF |
Quantity: | 90 |
1 +: | $ 17.91090 |
30 +: | $ 15.22310 |
120 +: | $ 14.14860 |
Series: | SMPD |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 6A, 15V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2875pF @ 800V |
FET Feature: | -- |
Power Dissipation (Max): | 940W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 16-SMPD |
Package / Case: | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad |
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IXRFSM12N100 is a single N-channel MOSFET, which belongs to a large family of FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors). This transistor, like other FETs and MOSFETs, is a voltage-controlled device and is used in many different applications and industries. This article will explain the applications and working principles of the IXRFSM12N100 MOSFET.
Applications
The IXRFSM12N100 is mostly used in audio amplifiers and pulse-width modulation (PWM) circuits. It can be used to build power supplies, signal switching, lighting dimmers and speed controllers for DC motors. It may also be used in the power stage of amplifier circuits. This MOSFET is ideal for switching applications where low on-resistance and high-speed switching are required.
Working Principle
The IXRFSM12N100 is a MOSFET that operates on the principle of majority carriers. Majority carriers are free electrons that are generated by the electrical energy applied to the gate terminal of the MOSFET. This causes a thin insulating layer of the MOSFET (known as the “channel”) to be pulled to the source terminal, thus forming a conductive bridge between the drain and the source. The voltage applied to the gate determines the amount of current that is allowed to flow between the drain and the source. The resistance of the MOSFET is dependent on the magnitude of the gate voltage.
The IXRFSM12N100 is an N-channel MOSFET, which means that electrons are used as the majority carriers. In most MOSFETs, the drain and source are connected internally, which means there is little risk of an accidental short circuit between the two. The IXRFSM12N100 is an ideal device for switching applications as it has a low on-resistance, which means that you can switch circuits off with relatively little power loss. It also has fast switching speeds, which means it can cope with high frequency signals.
The IXRFSM12N100 is used in a wide range of applications, from audio amplifiers and power supplies to signal switching and motor speed controllers. It is a reliable, efficient device and is capable of switching large amounts of current without overheating. It is easy to use and requires little maintenance, making it an ideal solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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