| Allicdata Part #: | IXRFSM18N50-ND |
| Manufacturer Part#: |
IXRFSM18N50 |
| Price: | $ 31.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS-RF |
| Short Description: | 18A 500V MOSFET IN SMPD PACKAGE |
| More Detail: | N-Channel 500V 19A (Tc) 835W Surface Mount 16-SMPD |
| DataSheet: |  IXRFSM18N50 Datasheet/PDF |
| Quantity: | 90 |
| 1 +: | $ 28.93590 |
| 30 +: | $ 24.59600 |
| 120 +: | $ 22.85980 |
| Series: | SMPD |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 20V |
| Rds On (Max) @ Id, Vgs: | 340 mOhm @ 9.5A, 20V |
| Vgs(th) (Max) @ Id: | 6.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 400V |
| FET Feature: | -- |
| Power Dissipation (Max): | 835W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 16-SMPD |
| Package / Case: | 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad |
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The IXRFSM18N50 is a single N-Channel MOSFET. This type of MOSFET is one of the more commonly used forms of transistors, as it is an available, compact, and inexpensive option for power devices. MOSFETs are an important element in electronics, and this type in particular is favored for its popular operating features and high power capability. The IXRFSM18N50 utilizes the vertical DMOS (VDMOS) technology in order to achieve a higher package power density and higher efficiency. This versatility makes the IXRFSM18N50 appealing to a wide range of applications, and useful in a variety of fields.
The main application field of the IXRFSM18N50 MOSFET is in power line regulation and DC-DC conversion. This MOSFET is well-adapted to the task due to its high current and voltage ratings, as well as its efficient operation. This MOSFET can be used for fast switching of high voltages, enabling it to be used in a variety of systems and applications. Additionally, the IXRFSM18N50 can be used in conjunction with small inductor-capacitor (LC) control loops. This is especially useful in controlling power supply equations in power system design.
The working principles of the IXRFSM18N50 stem from the general design principles of a MOSFET. MOSFETs are composed of a source and a drain, both of which are connected to pins located at one end of the MOSFET. The source is relatively negative and the drain is relatively positive. In between these two is an insulated gate, which acts as a switch for the flow of electrons. When a positive voltage is applied to the gate, electrons flow from the source to the drain, allowing current to pass from the source to the drain.
In the case of the IXRFSM18N50, the device uses a vertical DMOS (VDMOS) structure. This is composed of a vertical n-column configuration which is connected to a p-doped substrate. The n-column is the neutral channel, and so when the gate is supplied with a positive voltage, the channel is formed and current is allowed to flow.
The IXRFSM18N50 is a popular choice for MOSFETs due to its efficient operation, high current and voltage ratings, and its versatile applications. As such, the primary application field of the IXRFSM18N50 is in power line regulation and DC-DC conversion. Additionally, its versatility allows it to be used in conjunction with small LC control loops, making it useful in various power system design equations. Furthermore, the IXRFSM18N50 utilizes the VDMOS technology, allowing for a higher package power density and greater efficiency.
The specific data is subject to PDF, and the above content is for reference
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