| Allicdata Part #: | IXTJ36N20-ND |
| Manufacturer Part#: |
IXTJ36N20 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 36A TO-247AD |
| More Detail: | N-Channel 200V 36A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTJ36N20 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 4mA |
| Package / Case: | TO-3P-3 Full Pack |
| Supplier Device Package: | TO-247AD |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2970pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 70 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IXTJ36N20 is a specific type of insulated gate bipolar transistor (IGBT) in a FET-type package. It is a single, dual, or triple junction component, featuring an integrated gate switch, low-voltage threshold, low power dissipation and low channel resistance. It has excellent thermal performance, thanks to its large surface area and the fact that it can be made in temperature rating of up to 175°C.
The IXTJ36N20 is used in a wide range of applications, from power control and conversion to signal processing. In power conversion, the IXTJ36N20 is commonly used as a fast switching device for controling the flow of electricity through an AC/DC or DC/DC converter. It is also used as a pulse transformer for driving the IGBTs or MOSFETs in an inverter, and for high-frequency AC/DC converters. In signal processing applications, it can be used to control the switching of analog circuits and to generate high-speed waveforms.
The IXTJ36N20 functions by providing an insulated gate between the source and drain terminals. A voltage applied to the gate of the device allows current to pass through the channel, allowing operation at low voltage levels and low power dissipation. The threshold voltage of the IXTJ36N20 can be adjusted by controlling the gate voltage, allowing more accurate control of the device. In addition, the IXTJ36N20 has a wide variation of temperature ratings and can operate in temperatures up to 175°C.
The IXTJ36N20 is an ideal device for applications that require fast switching, low voltage and low power consumption. Its insulated gate makes it highly efficient and reliable, and its high temperature rating make it well suited for applications where power or signal processing is required in harsh environments. The wide range of applications and functions, combined with its adjustable threshold voltage make the IXTJ36N20 a highly versatile device.
The specific data is subject to PDF, and the above content is for reference
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