IXTJ4N150 Allicdata Electronics
Allicdata Part #:

IXTJ4N150-ND

Manufacturer Part#:

IXTJ4N150

Price: $ 5.99
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1500V 2.5A ISOTO-247
More Detail: N-Channel 1500V 2.5A (Tc) 110W (Tc) Through Hole T...
DataSheet: IXTJ4N150 datasheetIXTJ4N150 Datasheet/PDF
Quantity: 1000
30 +: $ 5.39133
Stock 1000Can Ship Immediately
$ 5.99
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1576pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 1500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTJ4N150 is a single field effect transistor (FET) that is made with a proprietary processing technology known as Intellifet. It was developed by On Semi as part of its series of high performance power FETs and is optimized for Switch Mode Power Supplies (SMPS).

It is a surface mount, power MOSFET with surface protection, comes in an standard 4-pin SOT-223 package and can support up to 25A current and a voltage of up to 150V. The IXTJ4N150 offers an array of features, allowing high current and voltage operation, while delivering low RDS (on). In essence, the IXTJ4N150 is an ideal solution for power systems requiring higher load current.

The IXTJ4N150 has inherently high power efficiency and temperatures that are lower than most other single FET products, making it suitable for a wide range of power applications. Its unique combination of features and performance means that it can be used in applications such as gain stages in amplifier circuits, Low Side Driver, Motor control and Noise Suppression circuits.

The IXTJ4N150 is based on an N-channel MOSFET design and utilizes two terminals, the source and drain, to control the flow of the current. The control of the current is achieved through the use of the voltage applied at the gate terminal. This principle of operation is known as the \'Depletion-Mode\' of operation and results in a very low on-state resistance, thereby reducing power dissipation.

The use of the N-channel MOSFET design enables the IXTJ4N150 to operate at higher voltages, as well as having excellent thermal and switching characteristics. The device is also very robust and can withstand a number of different operating conditions and temperatures. In addition, the IXTJ4N150 includes a built-in sensing and shutdown circuit for outage protection.

The application field of the IXTJ4N150 is extremely varied and can be used in a wide range of markets and industries, including automotive, industrial, consumer electronics and medical equipment. It offers high power efficiency and is extremely reliable and durable, making it an ideal choice for power systems such as Switch Mode Power Supplies, Motor Control and amplifier circuits.

In conclusion, the IXTJ4N150 is a single FET device that is ideal for power systems requiring higher load current and high power efficiency. Its N-channel MOSFET design enables it to operate at high voltages while maintaining excellent thermal and switching characteristics. The IXTJ4N150 can be used in a wide range of industries and applications including Gain Stages in Amplifier Circuits, Motor Control and Noise Suppression.

The specific data is subject to PDF, and the above content is for reference

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