Allicdata Part #: | IXUC100N055-ND |
Manufacturer Part#: |
IXUC100N055 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 100A ISOPLUS-220 |
More Detail: | N-Channel 55V 100A (Tc) 150W (Tc) Through Hole ISO... |
DataSheet: | IXUC100N055 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | ISOPLUS220™ |
Supplier Device Package: | ISOPLUS220™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.7 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FETs and MOSFETs are relatively simple transistors that are used in a variety of applications. They are used to switch current on and off, to increase or decrease the resistance of a circuit, and to amplify a signal. The IXUC100N055 is a MOSFET transistor specifically designed to offer increased functionality and reliability in a wide variety of applications.
The IXUC100N055 is a single-ended transistor with a voltage rating of 100 V and a current rating of 55 A. It is constructed from a single diffused layer of silicon which is then coated in a protective coating to protect against corrosion and other environmental effects. The transistor is designed to operate in a broad range of temperatures, from -55 ℃ to +150 ℃, and to handle high-frequency signals with low distortion. The FXUC100N055 is used in a wide range of applications including automotive electronics, power supplies, motor drivers, and amplifiers.
The IXUC100N055 MOSFET transistor has a variety of advantages over traditional transistors. It is relatively small in size and can be easily integrated into circuit boards. It has a low on-state resistance, which means it can provide higher levels of efficiency and more power. Additionally, its low gate capacitance allows it to work with higher frequency signals without compromising accuracy.
The working principle of the IXUC100N055 MOSFET transistor is relatively straightforward. When the voltage supplied to the gate terminal is below the threshold voltage, the MOSFET is said to be in the off-state. This causes the source-drain region to become pinched off, preventing the flow of current. When the gate voltage exceeds the threshold voltage, the transistor will enter the on-state. In this state, the source-drain region is un-pinched and current can flow.
In conclusion, the IXUC100N055 is a single-ended MOSFET transistor designed to offer increased reliability and efficiency in many different applications. It has a wide range of temperature and frequency compatibility, low gate capacitance, and a low on-state resistance. The transistor operates on a simple principle, allowing current to flow through the source-drain region when the gate voltage exceeds the threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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