IXUC160N075 Allicdata Electronics
Allicdata Part #:

IXUC160N075-ND

Manufacturer Part#:

IXUC160N075

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 160A ISOPLUS220
More Detail: N-Channel 75V 160A (Tc) 300W (Tc) Through Hole ISO...
DataSheet: IXUC160N075 datasheetIXUC160N075 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 2mA
Package / Case: ISOPLUS220™
Supplier Device Package: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FETs, or field effect transistors, are an important family of transistors that are key to many modern electronics. The IXUC160N075 is a single JFET (junction FET) that has a variety of wide-ranging uses in industrial, commercial, and military applications. This versatile FET has been designed for many uses in applications such as switching circuits, amplifiers, and motor control. In this article, we will explore the IXUC160N075’s applications and its working principle.

The IXUC160N075 is a high-performance FET that is suitable for use in many different types of applications. It is a Japanese-made, high-reliability FET that is suitable for a wide range of uses in electronic equipment, including automotive, medical, and space applications. It can be used in switching circuits, amplifiers, and motor control. It is particularly suited to higher temperature applications due to its superior temperature rating.

The key features of the IXUC160N075 make it ideal for a wide range of applications. It is highly reliable with a breakdown voltage of 200V, a leakage current of 2μA, and a maximum drain-source on-resistance of 4.0Ω. It also features a maximum junction temperature of 175°C, a total gate-source capacitance of 0.64pF, and a gate-source capacitance of 0.7V. It is suitable for use in both negative and positive voltage supplies.

Its design brings a range of advantages for users. It has a low profile package, making it suitable for high density mounting. It also features a lower on-resistance, meaning it can be used in applications where a low voltage drop is required. It features fast switching, making it ideal for applications such as pulse width modulation and pulse-width modulation output stages. It also provides superior performance in applications such as high-speed gate switches, sample and hold circuits, and phase-locked loops.

In terms of its working principle, the IXUC160N075 is a depletion mode, bipolar FET that operates in the same way as a P-channel FET. When the gate is given a negative voltage, the P-channel will be turned on and the device will conduct current. When the voltage is set to 0V, the P-channel will be turned off, stopping the flow of current. In this way, the IXUC160N075 can be used for signals in the 0V to 20V range.

The IXUC160N075 is a robust, high-reliability FET that is suitable for a wide range of applications. It is a highly versatile device that can be used in switching circuits, amplifiers, and motor control. Its features make it ideal for many applications, including automotive, medical, and space applications. With a breakdown voltage of 200V, a leakage current of 2μA, and a maximum drain-source on-resistance of 4.0Ω, the IXUC160N075 provides superior performance, reliability, and affordability.

The specific data is subject to PDF, and the above content is for reference

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