IXUV170N075

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IXUV170N075 Application Field and Working Principle

IXUV170N075 is an enhancement-mode enhancement-type low-voltage insulated-gate field-effect transistor (MOSFET). The IXUV170N075 is a transistor-level electronic component with a the characteristic of voltage-controlled current conduction. Specifically, this MOSFET conduction is related to the electrical state of its gate, which is insulated from its source and drain. When the gate voltage is below the threshold voltage, the current from the source to the drain will be blocked; when the gate voltage is above the threshold voltage, the conduction path will be established.

The IXUV170N075 MOSFET is an efficient and reliable voltage-controlled device for power management applications. Its low on-state resistance, fast switching speed, and low gate drive power requirements make it an ideal choice for system designers. The IXUV170N075 is also used in high voltage switching applications, such as power switching circuits, power line protection, or other high power circuits.

The IXUV170N075 MOSFET has a channel length of 0.75um and a channel width of 0.75um, making it suitable for switching high currents and low gate drive power. It has a maximum drain current of 7A and a breakdown voltage of 170V. The maximum VGS rating for this MOSFET is 20V, meaning it can withstand higher voltages when circuit protection is required. It also has a very low on-state resistance of 0.35Ω, making it suitable for high power applications.

In terms of its working principle, the IXUV170N075 MOSFET follows the principle of field-effect transistor (FET) devices, which consist of one or more semiconductor channels between the source and drain. In general, when the gate voltage is greater than the threshold voltage, there will be current conduction between the source and the drain. This conduction is then further modulated by the gate voltage, allowing for precise control of the source-drain current. In the IXUV170N075, this same principle applies; when the gate voltage is above the threshold voltage, the conduction path between the source and the drain is established.

Due to its characteristics, the IXUV170N075 MOSFET is suitable for a wide range of application fields, such as power converters, power management, DC/DC converters, and motor control applications. Additionally, its efficient gate drive characteristics make it suitable for automotive, LED lighting, and solar panel applications. It is also used in high-voltage switching applications, such as in power switching circuits, power line protection, or other high-power circuits.

In conclusion, the IXUV170N075 MOSFET is a reliable, efficient and cost-effective transistor-level electronic component with high power and low voltage-controlled current conduction. It is suitable for high-power switching, power management, and motor control applications. Its low on-state resistance and fast switching speed make it suitable for a wide range of application fields.

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