IXUV170N075S Allicdata Electronics
Allicdata Part #:

IXUV170N075S-ND

Manufacturer Part#:

IXUV170N075S

Price: $ 9.56
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 170A PLUS220-S
More Detail: N-Channel 75V 175A (Tc) Surface Mount PLUS-220SMD
DataSheet: IXUV170N075S datasheetIXUV170N075S Datasheet/PDF
Quantity: 1000
1 +: $ 8.68770
Stock 1000Can Ship Immediately
$ 9.56
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: PLUS-220SMD
Package / Case: PLUS-220SMD
Description

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The IXUV170N075S is a versatile power mosfet designed for high power switching and linear applications that require a high degree of reliability. It features an extremely low on-resistance of only 0.75 ohms and can handle large amounts of power. The IXUV170N075S is used in a wide range of applications, such as automotive power management, industrial motor drives, and power supplies. It is also used in the fields of aviation and military, as it is able to withstand harsh conditions and meet military specifications.

At the heart of the IXUV170N075S is its advanced vertical Power Trench Mosfet technology. This innovative technology improves the device’s ability to withstand high switching currents and its ability to dissipate heat. It also offers high levels of noise optimization and low RDS(on). Additionally, it features a low gate-drain capacitance and high-side floating gate structure for improved stability.

The IXUV170N075S utilizes a thermally enhanced molded package for improved heat dissipation and power density. The package is also designed to reduce production costs by allowing for tighter PCB routing and reducing component count. Additionally, this package offers excellent latch-up immunity, meaning that it is less likely to be damaged by electrostatics discharge (ESD) or static electricity.

The IXUV170N075S is designed for high temperature applications and its drain-source voltage range reaches from 600V to 900V. It has typical maximum voltage ratings of 60V for the gate-source voltage, and 27V for the drain-gate voltage. Additionally, it has an operating temperature range from -55℃ to +150℃ and a drain-source current rating of 17A. It also features an insulated gate with a gate charge of 7.8uC.

The IXUV170N075S features the latest in Power MOSFET design. This device is designed to provide superior performance while also offering benefits like reduced component count and lower cost. The IXUV170N075S can handle high switching frequencies which makes it ideal for high speed applications. The IXUV170N075S is also highly reliable, making it suitable for use in applications requiring high power and reliability.

Overall, the IXUV170N075S is a versatile, reliable and cost effective power MOSFET that is ideal for use in a wide range of applications. With its low on-resistance and high power density, it is capable of handling high power applications easily and is highly reliable. Additionally, its package is designed for good heat dissipation, making it suitable for use in high temperature environments. As such, the IXUV170N075S is a great choice for a wide range of applications, particularly those requiring high power and reliability.

The specific data is subject to PDF, and the above content is for reference

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