IXYP10N65C3 Allicdata Electronics

IXYP10N65C3 Discrete Semiconductor Products

Allicdata Part #:

IXYP10N65C3-ND

Manufacturer Part#:

IXYP10N65C3

Price: $ 1.13
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 650V 30A 160W TO220
More Detail: IGBT PT 650V 30A 160W Through Hole TO-220AB
DataSheet: IXYP10N65C3 datasheetIXYP10N65C3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
50 +: $ 1.02539
Stock 1000Can Ship Immediately
$ 1.13
Specifications
Power - Max: 160W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 10A, 50 Ohm, 15V
Td (on/off) @ 25°C: 20ns/77ns
Gate Charge: 18nC
Input Type: Standard
Switching Energy: 240µJ (on), 110µJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Current - Collector Pulsed (Icm): 54A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXYP10N65C3 is a transistor belonging to the family of Insulated Gate Bipolar Transistors (IGBTs). This is a vertical single device, meaning there is just a single IGBT enclosed in a single package. The IXYP10N65C3 is widely used in a variety of projects, due to its good performance, easy to use features and good thermal conductivity.

IGBTs, like The IXYP10N65C3, are commonly used for many different applications such as motor control, switching speed control, dynamic braking of electric vehicles, induction heating, AC arc welding, etc. These components are widely used because of their very low switching loss, high efficiency, low EMI and low leakage current. They are highly reliable and durable, offering long life warranty even in the toughest applications.

The IXYP10N65C3 transistor works on the principle of Gate turn on/off. This type of device is known as ansaturation voltage triggered device. When a voltage is applied to the Gate, the transistor is switched on, allowing current to flow through the device. On the other hand, when the voltage is removed from the Gate, the transistor is switched off, preventing current from flowing. This is known as the saturated voltage triggered devices.

In addition, the IXYP10N65C3 has the ability to withstand very high temperatures, making it ideal for applications in the automobile and aviation industries. The component also has excellent thermal performance, providing good thermal stability even at high temperatures. This helps devices operate for a longer time at high temperatures without affecting the performance or device reliability.

The IXYP10N65C3 transistor also has excellent noise immunity, making it ideal for applications where noise suppression is required. Additionally, it features a wide operating range, allowing it to work efficiently in a variety of conditions. Furthermore, the component is designed to be highly resistant to overvoltage, helping it remain safe against overvoltage and electrostatic hazards.

All these features and capabilities make the IXYP10N65C3 a great choice for power semiconductor applications. The component is highly reliable and offers long-term durability and performance. The component has low switching loss and high efficiency, making it great for high power applications. With its excellent thermal performance, the IXYP10N65C3 is suitable for applications in high temperature environments.

In summary, the IXYP10N65C3 is an excellent choice for a variety of power semiconductor applications. It is highly reliable and offers long-term durability. Additionally, the component provides excellent thermal performance, low switching loss and high efficiency. The device also provides noise immunity, wide operating range and overvoltage protection, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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