IXYP50N65C3 Allicdata Electronics

IXYP50N65C3 Discrete Semiconductor Products

Allicdata Part #:

IXYP50N65C3-ND

Manufacturer Part#:

IXYP50N65C3

Price: $ 4.55
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 650V 130A 600W TO220
More Detail: IGBT PT 650V 130A 600W Through Hole TO-220
DataSheet: IXYP50N65C3 datasheetIXYP50N65C3 Datasheet/PDF
Quantity: 50
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.13280
10 +: $ 3.68802
25 +: $ 3.31909
100 +: $ 3.02406
250 +: $ 2.72901
500 +: $ 2.44875
1000 +: $ 2.06520
Stock 50Can Ship Immediately
$ 4.55
Specifications
Power - Max: 600W
Supplier Device Package: TO-220
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 36A, 5 Ohm, 15V
Td (on/off) @ 25°C: 22ns/80ns
Gate Charge: 80nC
Input Type: Standard
Switching Energy: 1.3mJ (on), 370µJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Current - Collector Pulsed (Icm): 250A
Current - Collector (Ic) (Max): 130A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXYP50N65C3 is a power transistor that is part of the IGBT family and is a type known as Single. It is relatively new to the market, offering a wide range of configuration options that can make it suitable for many applications. In this article, we will look at the application field and working principle of the IXYP50N65C3.

What is an IGBT?

IGBT stands for insulated-gate bipolar transistor. It is a type of power MOSFET transistor that combines the best of both worlds, offering extremely fast switching time while still offering the voltage and current ratings of a bipolar junction or bipolar transistor. This makes it ideal for applications such as switching large currents and operating high power motor loads.

IXYP50N65C3 Application Field

The IXYP50N65C3 is typically used in applications that require high power and high speed switching. It is ideal for use in power conditioning, motor control, industrial inverters, UPS systems andindustrial electronics. It can also be used for renewable energy applications such as wind turbines, solar energy systems and electric vehicles.

IXYP50N65C3 Working Principle

The working principle of the IXYP50N65C3 is based on the use of an insulated gate. This gate is insulated from the other elements of the transistor so that the electric current flowing through it experiences high voltage which causes it to switch between two positions, either on or off. In the on state, current flows freely, while in the off state, current is blocked.

When the gate is on, a voltage signal is sent to the emitter and collector, which causes current to flow through the device. This current is then amplified, resulting in an increased output. The IXYP50N65C3 is designed to be able to switch quickly between on and off, allowing for quick switching of high power loads.

Conclusion

The IXYP50N65C3 is a powerful, fast-switching IGBT that can be used in applications requiring high power and high speed switching. Its insulated gate technology allows it to switch quickly between the on and the off states, allowing for the quick switching of high power loads. Its wide range of configuration options makes it suitable for many applications, including renewable energy, power conditioning and motor control.

The specific data is subject to PDF, and the above content is for reference

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