IXYP8N90C3 Discrete Semiconductor Products |
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Allicdata Part #: | IXYP8N90C3-ND |
Manufacturer Part#: |
IXYP8N90C3 |
Price: | $ 1.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 900V 20A 125W TO220 |
More Detail: | IGBT 900V 20A 125W Through Hole TO-220AB |
DataSheet: | IXYP8N90C3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 1.48844 |
Power - Max: | 125W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Test Condition: | 450V, 8A, 30 Ohm, 15V |
Td (on/off) @ 25°C: | 16ns/40ns |
Gate Charge: | 13.3nC |
Input Type: | Standard |
Switching Energy: | 460µJ (on), 180µJ (off) |
Series: | GenX3™, XPT™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 8A |
Current - Collector Pulsed (Icm): | 48A |
Current - Collector (Ic) (Max): | 20A |
Voltage - Collector Emitter Breakdown (Max): | 900V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Transistors - IGBTs - Single
IXYP8N90C3 is a Single IGBT transistor device designed to switch high voltage and high current. It is mainly used for power conversion, including applications such as DC-DC converters, AC/DC converters and motor drives. This device is designed to reduce switching loss, and is capable of operating at high frequencies up to a maximum of over 5 kHz.
This IGBT transistor consists of an N-channel insulated gate field-effect transistor (IGFET) and a control circuit. During normal operation, the control signal is used to turn on or turn off the device. It features a floating body, standard gate bias current of 10.5 μA, and a maximum collector current of 8 A. The collector-emitter breakdown voltage (BV CES ) of the device is 900 V, with a low on-state voltage drop of only 2 V at 6 A.
The collector-gate voltage is specified as 20V typical and 25V maximum, with a maximum insulation voltage (rms) between gate-collector and emitter-collector of 4500 V. This device has a maximum on-state base current of 150 mA, and a high collector-emitter saturation voltage of 1.6 V at 6A.
This device is used in a wide range of applications due to its high efficiency. It is typically used in higher power applications such as AC/DC and DC/DC applications, motor drives, and power converters for renewable energy. This device is also suitable for applications with high switching frequencies, and has been used in frequency converters and Lighting Control Modules (LCMs).
In addition to its high switching speed, IXYP8N90C3 also has excellent protection features. It includes an inrush current limit circuit, reverse polarity protection diodes, and temperature sensing. This means that the device is extremely reliable and provides protection against accidental connections and over temperature.
Overall, IXYP8N90C3 is an ideal choice for a wide range of power conversion applications. Its high efficiency, low voltage drop, and excellent protection features make it an attractive option for high voltage and high current applications. It is also suitable for applications with high switching frequencies, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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