IXYP8N90C3 Allicdata Electronics

IXYP8N90C3 Discrete Semiconductor Products

Allicdata Part #:

IXYP8N90C3-ND

Manufacturer Part#:

IXYP8N90C3

Price: $ 1.64
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 900V 20A 125W TO220
More Detail: IGBT 900V 20A 125W Through Hole TO-220AB
DataSheet: IXYP8N90C3 datasheetIXYP8N90C3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
50 +: $ 1.48844
Stock 1000Can Ship Immediately
$ 1.64
Specifications
Power - Max: 125W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: --
Test Condition: 450V, 8A, 30 Ohm, 15V
Td (on/off) @ 25°C: 16ns/40ns
Gate Charge: 13.3nC
Input Type: Standard
Switching Energy: 460µJ (on), 180µJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Current - Collector Pulsed (Icm): 48A
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 900V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Transistors - IGBTs - Single

IXYP8N90C3 is a Single IGBT transistor device designed to switch high voltage and high current. It is mainly used for power conversion, including applications such as DC-DC converters, AC/DC converters and motor drives. This device is designed to reduce switching loss, and is capable of operating at high frequencies up to a maximum of over 5 kHz.

This IGBT transistor consists of an N-channel insulated gate field-effect transistor (IGFET) and a control circuit. During normal operation, the control signal is used to turn on or turn off the device. It features a floating body, standard gate bias current of 10.5 μA, and a maximum collector current of 8 A. The collector-emitter breakdown voltage (BV CES ) of the device is 900 V, with a low on-state voltage drop of only 2 V at 6 A.

The collector-gate voltage is specified as 20V typical and 25V maximum, with a maximum insulation voltage (rms) between gate-collector and emitter-collector of 4500 V. This device has a maximum on-state base current of 150 mA, and a high collector-emitter saturation voltage of 1.6 V at 6A.

This device is used in a wide range of applications due to its high efficiency. It is typically used in higher power applications such as AC/DC and DC/DC applications, motor drives, and power converters for renewable energy. This device is also suitable for applications with high switching frequencies, and has been used in frequency converters and Lighting Control Modules (LCMs).

In addition to its high switching speed, IXYP8N90C3 also has excellent protection features. It includes an inrush current limit circuit, reverse polarity protection diodes, and temperature sensing. This means that the device is extremely reliable and provides protection against accidental connections and over temperature.

Overall, IXYP8N90C3 is an ideal choice for a wide range of power conversion applications. Its high efficiency, low voltage drop, and excellent protection features make it an attractive option for high voltage and high current applications. It is also suitable for applications with high switching frequencies, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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