Allicdata Part #: | IXYP15N65C3D1M-ND |
Manufacturer Part#: |
IXYP15N65C3D1M |
Price: | $ 1.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 650V 16A 48W TO-220 |
More Detail: | IGBT PT 650V 16A 48W Through Hole TO-220AB |
DataSheet: | IXYP15N65C3D1M Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 1.63724 |
Power - Max: | 48W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 30ns |
Test Condition: | 400V, 15A, 20 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/68ns |
Gate Charge: | 19nC |
Input Type: | Standard |
Switching Energy: | 270µJ (on), 230µJ (off) |
Series: | GenX3™, XPT™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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.The IXYP15N65C3D1M is a high voltage insulated gate bipolar transistor, commonly referred to as an IGBT. It is part of the single transistor family, meaning that it is composed of only one conductive channel. This kind of transistor is known for its ability to switch high currents and also for being power-saving. IXYP15N65C3D1M is able to control the output voltage and current, an important feature for many power applications.
The IXYP15N65C3D1M is a high-performance device suitable for a wide range of applications, from motor control and power supplies to renewable energy, telecommunications, and light electric vehicles. Motor control is a big application for this type of transistor because it allows the user to control the rotation of an electric motor or a generator. In power supplies, this part can be used to regulate the output voltage and current of a power supply, thus avoiding any overloads or current surges. It is also used to protect electronic equipment from extreme voltages and currents.
The IXYP15N65C3D1M has an insulated gate with a metal-oxide semiconductor field effect which is effective in isolating the collector and emitter. The insulated gate reduces the on-state voltage up to the maximum rating of 600V. The maximum off-state voltage that can be handled by this device is up to 1500V. The transistor also has a diode integrated in the package for improved safety. The diode protects the device from damage when it is switched off.
In terms of its working principle, IXYP15N65C3D1M as mentioned before is part of the single transistor family. This means it has one conductive channel and the working principle is different from that of a conventional two transistor structure. The gate voltage controls the flow of current from the collector to the emitter. The gate voltage acts as a switch and when it is turned off, it stops the flow of current from the collector to the emitter.
In conclusion, the IXYP15N65C3D1M is a high-performance device suitable for a wide range of applications. It is part of the single transistor family and its working principle involves the control of the output voltage and current. This part can be used in motor control, power supply, telecommunications, renewable energy and even light electric vehicles. Thanks to its insulated gate, the IXYP15N65C3D1M is capable of withstanding high voltages up to 1500V and the integrated diode helps to protect the device from any damage.
The specific data is subject to PDF, and the above content is for reference
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