Allicdata Part #: | IXYP10N65C3D1-ND |
Manufacturer Part#: |
IXYP10N65C3D1 |
Price: | $ 1.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 650V 30A 160W TO-220 |
More Detail: | IGBT PT 650V 30A 160W Through Hole TO-220 |
DataSheet: | IXYP10N65C3D1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 1.62074 |
Power - Max: | 160W |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 170ns |
Test Condition: | 400V, 10A, 50 Ohm, 15V |
Td (on/off) @ 25°C: | 20ns/77ns |
Gate Charge: | 18nC |
Input Type: | Standard |
Switching Energy: | 240µJ (on), 110µJ (off) |
Series: | GenX3™, XPT™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 54A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IXYP10N65C3D1 is a type of transistor known as an insulated gate bipolar transistor (IGBT). IGBTs are a type of transistor that combines the features of both a MOSFET and a bipolar junction transistor (BJT). IGBTs combine the input control of a MOSFET with the high current and power handling of a BJT. This type of transistor is useful in a wide variety of applications.
The IXYP10N65C3D1 is a single IGBT, which refers to the fact that it is only comprised of a single driver (or power switch) and a single collector/emitter pair. Single IGBTs are typically used in low voltage applications, such as controlling small motors, as well as power regulation and other applications which require low power and current handling capabilities.
The IXYP10N65C3D1 is a N-channel, which means that its the primary charge carrier is the negatively-charged electron. N-channel IGBTs tend to have higher maximum ratings for current and power handling, making them well-suited to higher-power applications.
The working principle of the IXYP10N65C3D1 is largely the same as any other IGBT. An external voltage is applied to the gate terminal, creating a channel of electrons between the source and drain. This allows current to flow from the source to the drain, thus providing power. The higher the voltage applied to the gate, the larger the channel is, allowing for more current to flow and more power to be delivered.
The applications for the IXYP10N65C3D1 are numerous. As a single IGBT, the IXYP10N65C3D1 is ideal for powering small motors, providing voltage and current regulation, and performing other low-power operations. It can also be used in more complex circuits, such as inverters, converters, and switch-mode power supplies.
In summary, the IXYP10N65C3D1 is a type of transistor known as an insulated gate bipolar transistor (IGBT). It is a single IGBT, meaning that it consists of only one driver and one collector/emitter pair. It is an N-channel IGBT, which gives it higher maximum ratings for current and power handling. The working principle of the IXYP10N65C3D1 is the same as any other IGBT, whereby an external voltage is applied to the gate in order to create a channel of electrons between the source and drain. The IXYP10N65C3D1 can be used for powering small motors, providing voltage and current regulation, and other low-power operations. It can also be used in more complex circuits, such as inverters, converters, and switch-mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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