IXYP15N65C3

Power - Max:	200W
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	400V, 15A, 20 Ohm, 15V
Td (on/off) @ 25°C:	15ns/68ns
Gate Charge:	19nC
Input Type:	Standard
Switching Energy:	270µJ (on), 230µJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 15A
Current - Collector Pulsed (Icm):	80A
Current - Collector (Ic) (Max):	38A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IntroductionThe IXYP15N65C3 is a single IGBT transistor device from Infineon Technologies AG. This device offers some very useful features, including high speed switching capability, low power consumption, high reliability, and long lifetime. It also has a wide range of possible applications and is suitable for use in many different types of power electronics systems.Overview of IXYP15N65C3The IXYP15N65C3 is a 20 A, 650 V IGBT transistor device. It is constructed using a unipolar single-die topology, which provides high speed switching and low power consumption. The device has a low gate drive voltage requirement of only 7.5 V and its transition times are extremely fast, making it very suitable for high frequency applications. It also has a high maximum junction temperature of 150 degrees C and a low junction capacitance of only 25 pF.Application FieldThe IXYP15N65C3 is suitable for many different types of applications. It can be used in AC and DC motor control applications, power supplies and converters, switch-mode power supplies, motor drives and motion control systems, UPS systems and renewable energy systems, consumer electronics and many other applications. It is also suitable for use in automotive and industrial applications, as well as in medical equipment applications.Working PrincipleThe IXYP15N65C3 works by allowing current to flow between two terminals, a collector and emitter terminal, when a voltage is applied to the gate terminal. The voltage applied to the gate determines the amount of current that can flow between the collector and emitter. When the voltage is low, the gate will block the current flow and when the voltage is high, the gate will allow a larger current flow. When the voltage is removed, the device will turn off and the current will stop flowing.ConclusionThe IXYP15N65C3 is a 20 A, 650 V single IGBT transistor device from Infineon Technologies AG. It is suitable for many different types of applications, such as AC and DC motor control, power supplies and converters, switch-mode power supplies, motor drives and motion control systems, UPS systems, and more. It works by allowing current to flow between a collector and emitter terminal when a voltage is applied to the gate terminal. The IXYP15N65C3 offers high speed switching, low power consumption, high reliability, and long lifetime.

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