Allicdata Part #: | IXYP20N65C3D1-ND |
Manufacturer Part#: |
IXYP20N65C3D1 |
Price: | $ 1.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 650V 18A 50W TO220 |
More Detail: | IGBT PT 650V 50A 200W Through Hole TO-220AB |
DataSheet: | IXYP20N65C3D1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 1.58760 |
Power - Max: | 200W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 135ns |
Test Condition: | 400V, 20A, 20 Ohm, 15V |
Td (on/off) @ 25°C: | 19ns/80ns |
Gate Charge: | 30nC |
Input Type: | Standard |
Switching Energy: | 430µJ (on), 350µJ (off) |
Series: | GenX3™, XPT™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 105A |
Current - Collector (Ic) (Max): | 50A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Transistors - IGBTs - Single
The IXYP20N65C3D1 is a high-performance insulated gate bipolar transistor (IGBT) of the 4th generation, a type of high-speed power MOSFETs, which combine their efficacy and fast switching capabilities with extremely short reverse recovery times. This model features an increased dc current gain, improved avalanche ruggedness and a low on-resistance. It has an interlock protection which helps protect against heat dissipation and therefore minimise the risk of continuous current.
The IXYP20N65C3D1 is mostly used in motor drives, UPS and industrial motor control applications, as well as in motor drives or electric welding equipment. It is also used in other applications including power supply, AC motor drives and temperature controllers. It is ideal for use in power converters where the surge current needs to be adjusted.
It is a single-gate transistor which operates in either forward or reverse direction depending on the type of application.
When the voltage applied to the gate exceeds a particular threshold, the IXYP20N65C3D1 turns on and allows current to pass through the collector and emitter. This process typically takes place in less than one microsecond and it is known as “switching”. This rapid switching of the device helps to reduce the energy losses associated with switching losses and improve system efficiency.
In addition, the IXYP20N65C3D1 is able to dissipate excessive heat generated by switching, which helps to reduce the impact of overheating on its operational lifetime as well as to reduce lifetime failures. This is achieved by its special interlock protection system that prevents excessive current from flowing through the device when it is under high load.
Furthermore, the IXYP20N65C3D1 is designed to maintain high efficiency even when operating at maximum power levels. This helps improve the ability of the device to provide reliable performance in the most challenging environments.
Overall, the IXYP20N65C3D1 is a highly reliable transistor that is able to provide superior performance in motor drives, temperature controllers and UPS applications. It also has a broad range of applications in other electrical and electronic systems. Also, its interlock protection system and fast switching capability enable it to handle high currents while maintaining a high level of efficiency. This is why the IXYP20N65C3D1 transistor is one of the most popular choice of IGBT array used in industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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