Allicdata Part #: | 1086-15202-ND |
Manufacturer Part#: |
JAN1N4104-1 |
Price: | $ 3.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 10V 500MW DO35 |
More Detail: | Zener Diode 10V 500mW ±5% Through Hole DO-35 |
DataSheet: | JAN1N4104-1 Datasheet/PDF |
Quantity: | 1000 |
222 +: | $ 3.35660 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 200 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 7.6V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
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Diodes - Zener - Single
A Zener diode is a type of diode that utilizes a reverse-biased pn junction with a heavily doped p region to allow significant current conduction in the reverse direction, when the voltage is above a certain breakdown voltage, known as the Zener voltage. The common term Zener diode is actually the representative of a broad family of semiconductor devices known as Zener or Avalanche diodes. The JAN1N4103-1 is a high-quality low power Zener diode from Micro Commercial Components, effectively designed for high stability over temperature range.
Applications of JAN1N4103-1
The JAN1N4103-1 can be used for a wide array of applications including voltage regulation, clipping, clamping, power supply design, and waveform shaping. These diodes work great for providing regulated voltage, reaching breakdown voltage at a specified current level, from an input higher than the amount of stabilized voltage. It can also be used in low power equipment, such as portable radios, cellular telephones, and LCD TV, among other applications.
Working Principle of JAN1N4103-1
The JAN1N4103-1 has a breakdown voltage of 9.1 V with an operating current of 27 mA. When the voltage across the diode exceeds the nominal Zener voltage, current starts to flow through the diode, thereby providing a constant 9.1 V output. The Zener maintained across the diode clamps the voltage at the Zener voltage and helps to stabilize the output voltage.
The construction of the JAN1N4103-1 diode is made using a silicon wafer coated with a zinc-plated metal case and internally connected with a tightly held metal-oxide-film layer. This layer prevents excess current from entering the diode and holds the Zener voltage to a minimum value. The diode is capable of handling high reverse bias without damage, but the maximum power dissipation must not exceed 1/2 watt.
The JAN1N4103-1 is an ideal solution in device design and integrated circuits where a low 9.1 V voltage supply is needed. As Zener diodes are designed to function in a specified breakdown voltage, the output voltage tolerances and temperature characteristics of the diode allows them to be used in applications such as voltage regulators, power supplies, surge protection circuit design, and reverse voltage protection circuits.
Conclusion
The JAN1N4103-1 offers a low power, high performance diode solution with a consistent 9.1 V voltage output. This diode is excellent for device design, power supply design and protection circuits as its breakdown voltage remains constant over temperature ranges and its reverse voltage voltage is low. This Zener diode is capable of handling up to 1/2 watt of power dissipation and offers efficient, long lasting performance. It is a great choice for engineers who need a reliable Zener diode for their designs.
The specific data is subject to PDF, and the above content is for reference
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