JAN1N5521B-1

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The JAN1N5521B-1 is a single zener diode that is widely used in many industrial and commercial applications. This diode offers excellent performance at a low cost. The JAN1N5521B-1 is manufactured using planar die construction, and it provides a zener voltage of 2.4 V with a maximum reverse leakage of 0.25 μA at 2 V.

This diode’s main application field is in low voltage noise prevention and switching circuits. With its planar construction, it helps minimize the excess noise that can occur in the system’s operational signals. The JAN1N5521B-1 is also used in line clamping and overvoltage protection circuits, where it prevents transients from entering the system.

The working principle of the JAN1N5521B-1 is based on the diode’s tunneling effect. By creating a tunneling barrier within the diode, the current flow is reduced when a certain zener voltage is reached. Thus, the diode effectively limits the voltage and current passing through it. This prevents the connected device from being damaged by too much voltage or current.

The JAN1N5521B-1 is a preferred choice for use in power supply systems, as it reduces the risk of an overvoltage incident and ensures the system remains stable. Moreover, its small size and low cost make it well-suited for application in consumer electronics, such as in radio and television sets. It is also found in military and aerospace systems, where it is used due to its performance and reliability.

Overall, the JAN1N5521B-1 is a single zener diode with excellent performance, reliability, and low cost. It is used in many applications such as line clamping and overvoltage protection, power supply systems, consumer electronics, and military and aerospace systems. Its working principle is based on the tunneling effect, which enables the diode to effectively limit the voltage and current passing through it.

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